IXTH30N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

FET Feature :

--

Power Dissipation Ambient-Max :

360 W

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Package / Case :

TO-247-3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

170m Ω @ 500mA, 10V

Power Dissipation :

360W

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

500 V

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Power Dissipation (Max) :

360W (Tc)

Terminal Form :

THROUGH-HOLE

Fall Time (Typ) :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

Published :

2002

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

30 A

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

21.46 mm

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

30A

Brand :

IXYS

Pbfree Code :

yes

RoHS :

Details

Power Dissipation-Max (Abs) :

360 W

Product Status :

Active

Pin Count :

3

Series :

MegaMOS™

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING

Base Product Number :

IXTH30

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-247 (IXTH)

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Product Category :

MOSFET

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.17Ohm

Turn-Off Delay Time :

110 ns

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AD

Number of Terminals :

3

Power Dissipation-Max :

360W Tc

Drain to Source Breakdown Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Rise Time :

42ns

Width :

5.3 mm

Polarity/Channel Type :

N-Channel

Transistor Type :

1 N-Channel

Packaging :

Tube

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

120A

Length :

16.26 mm