IXTH30N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

120A

FET Feature :

--

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

75m Ω @ 15A, 10V

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Subcategory :

MOSFETs

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

30A

Number of Terminals :

3

Element Configuration :

Single

Surface Mount :

No

Drain-source On Resistance-Max :

0.075Ohm

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Height :

21.46 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1000 mJ

Qualification Status :

Not Qualified

Configuration :

Single

Number of Terminations :

3

Rise Time :

19ns

ECCN Code :

EAR99

Package / Case :

TO-247-3

Power Dissipation (Max) :

200W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Turn-Off Delay Time :

79 ns

Drain to Source Voltage (Vdss) :

250V

JEDEC-95 Code :

TO-247AD

RoHS :

Details

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

MOSFET

Product Status :

Active

Mount :

Through Hole

Series :

--

Drain to Source Breakdown Voltage :

250V

Mounting Style :

Through Hole

Supplier Device Package :

TO-247 (IXTH)

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Power Dissipation :

200W

Base Product Number :

IXTH30

Length :

16.26 mm

Fall Time (Typ) :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Published :

2001

Power Dissipation-Max :

200W Tc

Manufacturer :

IXYS

Number of Channels :

1 Channel

Product Type :

MOSFET

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Width :

5.3 mm

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

250 V