IXTH300N04T2
- Mfr.Part #
- IXTH300N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 300A TO247
- Stock
- 1,637
- In Stock :
- 1,637
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 300A
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 40V
- Drain to Source Voltage (Vdss) :
- 40V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 50A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Factory Lead Time :
- 28 Weeks
- Published :
- 2008
- Package / Case :
- TO-247-3
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 900A
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-247 (IXTH)
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Number of Terminations :
- 3
- Series :
- TrenchT2™
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Base Product Number :
- IXTH300
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation (Max) :
- 480W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Mount :
- Through Hole
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 480W Tc
- JEDEC-95 Code :
- TO-247AD
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- RoHS :
- Details
- Product Status :
- Active
- JESD-609 Code :
- e1
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Pin Count :
- 3
- Datasheets
- IXTH300N04T2
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N-Channel Tube 2.5m Ω @ 50A, 10V ±20V 10700pF @ 25V 145nC @ 10V 40V TO-247-3
IXTH300N04T2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 10700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 300A.Peak drain current for this device is 900A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH300N04T2 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
IXTH300N04T2 Applications
There are a lot of IXYS
IXTH300N04T2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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