IXTH2R4N120P

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Mfr.Part #
IXTH2R4N120P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1200V 2.4A TO247
Stock
30,000
In Stock :
30,000

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Avalanche Energy Rating (Eas) :
200 mJ
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Mount :
Through Hole
Power Dissipation (Max) :
125W (Tc)
Package :
Tube
Pbfree Code :
yes
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drain-source On Resistance-Max :
7.5 Ω
Series :
Polar™
Length :
16.26 mm
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
1207pF @ 25V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
1.2kV
Drain to Source Voltage (Vdss) :
1200V
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Case Connection :
DRAIN
Manufacturer :
IXYS
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-247 (IXTH)
Turn-Off Delay Time :
70 ns
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Package / Case :
TO-247-3
FET Type :
N-Channel
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
125 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Factory Lead Time :
28 Weeks
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminals :
3
Continuous Drain Current (ID) :
2.4A
Base Product Number :
IXTH2
Power Dissipation-Max :
125W Tc
DS Breakdown Voltage-Min :
1200 V
Element Configuration :
Single
Qualification Status :
Not Qualified
Power Dissipation :
125W
Pulsed Drain Current-Max (IDM) :
6A
Package Shape :
RECTANGULAR
Number of Elements :
1
Height :
21.46 mm
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Fall Time (Typ) :
32 ns
Current - Continuous Drain (Id) @ 25°C :
2.4A Tc
Rise Time :
25ns
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
2.4 A
Surface Mount :
No
Product Type :
MOSFET
FET Feature :
--
Product Category :
MOSFET
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
5.3 mm
Packaging :
Tube
Datasheets
IXTH2R4N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH2R4N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTH2R4N120P pinout, IXTH2R4N120P datasheet PDF, IXTH2R4N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH2R4N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH2R4N120P


N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 1207pF @ 25V 37nC @ 10V 1200V TO-247-3

IXTH2R4N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 1207pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 2.4 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 6A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTH2R4N120P Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 6A.
a 1200V drain to source voltage (Vdss)


IXTH2R4N120P Applications


There are a lot of IXYS
IXTH2R4N120P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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