IXTH26P20P

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Mfr.Part #
IXTH26P20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 200V 26A TO247
Stock
9,173
In Stock :
9,173

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2007
Supplier Device Package :
TO-247 (IXTH)
FET Feature :
--
Transistor Application :
SWITCHING
Configuration :
Single
Fall Time (Typ) :
21 ns
Input Capacitance :
2.74 nF
Additional Feature :
AVALANCHE RATED
Length :
16.26 mm
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
170m Ω @ 13A, 10V
JEDEC-95 Code :
TO-247AD
Product Status :
Active
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 175 C
Rise Time :
33ns
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4V @ 250µA
Pbfree Code :
yes
Package / Case :
TO-247-3
Operating Temperature :
-55°C~175°C TJ
Channel Mode :
Enhancement
Factory Lead Time :
28 Weeks
RoHS :
Compliant
Mount :
Through Hole
Power Dissipation-Max :
300W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
46 ns
FET Type :
P-Channel
Vgs (Max) :
±20V
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Rds On Max :
170 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
300W
Avalanche Energy Rating (Eas) :
1500 mJ
Product Type :
MOSFET
Pin Count :
3
Mounting Type :
Through Hole
Product Category :
MOSFET
Transistor Polarity :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
300W (Tc)
Height :
21.46 mm
Min Operating Temperature :
-55 °C
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Drain to Source Voltage (Vdss) :
200V
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 P-Channel
Lead Free :
Lead Free
Number of Channels :
1 Channel
Package :
Tube
Max Operating Temperature :
175 °C
Drain to Source Resistance :
170 mΩ
Max Power Dissipation :
300 W
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Continuous Drain Current (ID) :
26A
Mounting Style :
Through Hole
Base Product Number :
IXTH26
Series :
PolarP™
Packaging :
Tube
Width :
5.3 mm
Drain to Source Breakdown Voltage :
-200V
Pulsed Drain Current-Max (IDM) :
70A
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2740pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Brand :
IXYS
Drain-source On Resistance-Max :
0.17Ohm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26P20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH26P20P pinout, IXTH26P20P datasheet PDF, IXTH26P20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26P20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26P20P


P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-247-3

IXTH26P20P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 170 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH26P20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 170 mΩ
a 200V drain to source voltage (Vdss)


IXTH26P20P Applications


There are a lot of IXYS
IXTH26P20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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