IXTH26P20P

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Mfr.Part #
IXTH26P20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 200V 26A TO247
Stock
9,173
In Stock :
9,173

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Packaging :
Tube
FET Feature :
--
Rds On Max :
170 mΩ
Drain to Source Voltage (Vdss) :
200V
JESD-30 Code :
R-PSFM-T3
Element Configuration :
Single
Product Category :
MOSFET
Package :
Tube
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
1500 mJ
JEDEC-95 Code :
TO-247AD
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
Supplier Device Package :
TO-247 (IXTH)
Maximum Operating Temperature :
+ 175 C
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
2740pF @ 25V
Transistor Type :
1 P-Channel
Package / Case :
TO-247-3
Base Product Number :
IXTH26
Drain to Source Breakdown Voltage :
-200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
2.74 nF
Min Operating Temperature :
-55 °C
Max Power Dissipation :
300 W
Power Dissipation (Max) :
300W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Length :
16.26 mm
Reach Compliance Code :
Unknown
RoHS :
Compliant
Brand :
IXYS
ECCN Code :
EAR99
Published :
2007
Qualification Status :
Not Qualified
Product Status :
Active
Power Dissipation-Max :
300W Tc
Height :
21.46 mm
Drain to Source Resistance :
170 mΩ
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
170m Ω @ 13A, 10V
Continuous Drain Current (ID) :
26A
Operating Mode :
ENHANCEMENT MODE
Max Operating Temperature :
175 °C
Minimum Operating Temperature :
- 55 C
FET Type :
P-Channel
Manufacturer :
IXYS
Number of Elements :
1
Number of Terminations :
3
Drain-source On Resistance-Max :
0.17Ohm
Pulsed Drain Current-Max (IDM) :
70A
Mounting Type :
Through Hole
Width :
5.3 mm
Turn-Off Delay Time :
46 ns
Series :
PolarP™
Product Type :
MOSFET
Power Dissipation :
300W
Factory Lead Time :
28 Weeks
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Channel Mode :
Enhancement
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Mount :
Through Hole
Rise Time :
33ns
Transistor Polarity :
P-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
21 ns
Datasheets
IXTH26P20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26P20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, IXTH26P20P pinout, IXTH26P20P datasheet PDF, IXTH26P20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26P20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26P20P


P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-247-3

IXTH26P20P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 170 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH26P20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 170 mΩ
a 200V drain to source voltage (Vdss)


IXTH26P20P Applications


There are a lot of IXYS
IXTH26P20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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