IXTH26P20P
- Mfr.Part #
- IXTH26P20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 26A TO247
- Stock
- 9,173
- In Stock :
- 9,173
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Packaging :
- Tube
- FET Feature :
- --
- Rds On Max :
- 170 mΩ
- Drain to Source Voltage (Vdss) :
- 200V
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JEDEC-95 Code :
- TO-247AD
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-247 (IXTH)
- Maximum Operating Temperature :
- + 175 C
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740pF @ 25V
- Transistor Type :
- 1 P-Channel
- Package / Case :
- TO-247-3
- Base Product Number :
- IXTH26
- Drain to Source Breakdown Voltage :
- -200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance :
- 2.74 nF
- Min Operating Temperature :
- -55 °C
- Max Power Dissipation :
- 300 W
- Power Dissipation (Max) :
- 300W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Length :
- 16.26 mm
- Reach Compliance Code :
- Unknown
- RoHS :
- Compliant
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Published :
- 2007
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Power Dissipation-Max :
- 300W Tc
- Height :
- 21.46 mm
- Drain to Source Resistance :
- 170 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 13A, 10V
- Continuous Drain Current (ID) :
- 26A
- Operating Mode :
- ENHANCEMENT MODE
- Max Operating Temperature :
- 175 °C
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- P-Channel
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.17Ohm
- Pulsed Drain Current-Max (IDM) :
- 70A
- Mounting Type :
- Through Hole
- Width :
- 5.3 mm
- Turn-Off Delay Time :
- 46 ns
- Series :
- PolarP™
- Product Type :
- MOSFET
- Power Dissipation :
- 300W
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Rise Time :
- 33ns
- Transistor Polarity :
- P-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 21 ns
- Datasheets
- IXTH26P20P
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P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-247-3
IXTH26P20P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 170 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH26P20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 170 mΩ
a 200V drain to source voltage (Vdss)
IXTH26P20P Applications
There are a lot of IXYS
IXTH26P20P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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