IXTH26N60P

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Mfr.Part #
IXTH26N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247
Stock
1,455
In Stock :
1,455

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
460W (Tc)
Power Dissipation-Max :
460W Tc
Pin Count :
3
Height :
21.46 mm
Supplier Device Package :
TO-247 (IXTH)
DS Breakdown Voltage-Min :
600 V
Additional Feature :
AVALANCHE RATED
Width :
5.3 mm
Drain to Source Breakdown Voltage :
600V
Package / Case :
TO-247-3
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Vgs(th) (Max) @ Id :
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Manufacturer :
IXYS
Avalanche Energy Rating (Eas) :
1200 mJ
Type :
PolarHV Power MOSFET
Number of Terminations :
3
RoHS :
Details
Terminal Position :
Single
Series :
PolarHV™
Resistance :
270mOhm
Pbfree Code :
yes
Transistor Application :
SWITCHING
Radiation Hardening :
No
Rise Time :
27ns
Pulsed Drain Current-Max (IDM) :
65A
Transistor Type :
1 N-Channel
Fall Time (Typ) :
21 ns
Power Dissipation :
460W
Gate to Source Voltage (Vgs) :
30V
Current Rating :
26A
Base Product Number :
IXTH26
Case Connection :
DRAIN
Brand :
IXYS
Number of Channels :
1 Channel
Surface Mount :
No
Published :
2006
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
28 Weeks
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory :
MOSFETs
Number of Elements :
1
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Package :
Tube
JEDEC-95 Code :
TO-247AD
Transistor Polarity :
N-Channel
Number of Terminals :
3
Reach Compliance Code :
Compliant
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
600V
Channel Mode :
Enhancement
Lead Free :
Lead Free
Turn-Off Delay Time :
75 ns
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Product Category :
MOSFET
Transistor Element Material :
SILICON
JESD-609 Code :
e1
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Tradename :
PolarHV
Mounting Type :
Through Hole
Voltage - Rated DC :
600V
Drain-source On Resistance-Max :
0.27 Ω
Maximum Operating Temperature :
+ 150 C
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
26A
Length :
16.26 mm
Datasheets
IXTH26N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:PolarHV Power MOSFET, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXTH26N60P pinout, IXTH26N60P datasheet PDF, IXTH26N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26N60P


N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3

IXTH26N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH26N60P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXTH26N60P Applications


There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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