IXTH26N60P
- Mfr.Part #
- IXTH26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247
- Stock
- 1,455
- In Stock :
- 1,455
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- Voltage - Rated DC :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 65A
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 26A
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 460W Tc
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Tradename :
- PolarHV
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 27ns
- Resistance :
- 270mOhm
- Length :
- 16.26 mm
- Supplier Device Package :
- TO-247 (IXTH)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Rating :
- 26A
- Package :
- Tube
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Height :
- 21.46 mm
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Base Product Number :
- IXTH26
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Subcategory :
- MOSFETs
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 21 ns
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 460W (Tc)
- Factory Lead Time :
- 28 Weeks
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-247-3
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-247AD
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.27 Ω
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 75 ns
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Series :
- PolarHV™
- Width :
- 5.3 mm
- Number of Terminations :
- 3
- Brand :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Type :
- PolarHV Power MOSFET
- Power Dissipation :
- 460W
- Channel Mode :
- Enhancement
- Datasheets
- IXTH26N60P
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N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3
IXTH26N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXTH26N60P Applications
There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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