IXTH26N60P

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Mfr.Part #
IXTH26N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247
Stock
1,455
In Stock :
1,455

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Product Status :
Active
Package Shape :
RECTANGULAR
Mount :
Through Hole
Mounting Style :
Through Hole
Voltage - Rated DC :
600V
Pulsed Drain Current-Max (IDM) :
65A
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Avalanche Energy Rating (Eas) :
1200 mJ
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Continuous Drain Current (ID) :
26A
Packaging :
Tube
Reach Compliance Code :
Compliant
Power Dissipation-Max :
460W Tc
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Tradename :
PolarHV
DS Breakdown Voltage-Min :
600 V
Rise Time :
27ns
Resistance :
270mOhm
Length :
16.26 mm
Supplier Device Package :
TO-247 (IXTH)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Current Rating :
26A
Package :
Tube
Radiation Hardening :
No
Pbfree Code :
yes
Transistor Application :
SWITCHING
Height :
21.46 mm
Number of Terminals :
3
Drain to Source Breakdown Voltage :
600V
Base Product Number :
IXTH26
Vgs(th) (Max) @ Id :
5V @ 250μA
Subcategory :
MOSFETs
Published :
2006
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
21 ns
Qualification Status :
Not Qualified
Power Dissipation (Max) :
460W (Tc)
Factory Lead Time :
28 Weeks
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-247AD
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Terminal Position :
Single
Drain-source On Resistance-Max :
0.27 Ω
Number of Elements :
1
Vgs (Max) :
±30V
Turn-Off Delay Time :
75 ns
JESD-609 Code :
e1
Transistor Element Material :
SILICON
Product Category :
MOSFET
Series :
PolarHV™
Width :
5.3 mm
Number of Terminations :
3
Brand :
IXYS
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Case Connection :
DRAIN
Manufacturer :
IXYS
Type :
PolarHV Power MOSFET
Power Dissipation :
460W
Channel Mode :
Enhancement
Datasheets
IXTH26N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:PolarHV Power MOSFET, IXTH26N60P pinout, IXTH26N60P datasheet PDF, IXTH26N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26N60P


N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3

IXTH26N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH26N60P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXTH26N60P Applications


There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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