IXTH260N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

480W Tc

Product Status :

Active

Continuous Drain Current (ID) :

260A

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 50A, 10V

Maximum Operating Temperature :

+ 175 C

Manufacturer :

IXYS

Package :

Tube

FET Feature :

--

Tradename :

HiPerFET

Base Product Number :

IXTH260

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Supplier Device Package :

TO-247 (IXTH)

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

260A Tc

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Channel Mode :

Enhancement

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Series :

TrenchT2™

Product Category :

MOSFET

Reach Compliance Code :

Unknown

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Pulsed Drain Current-Max (IDM) :

780A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Brand :

IXYS

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Power Dissipation (Max) :

480W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Mount :

Through Hole

Packaging :

Tube

Number of Elements :

1

Drain-source On Resistance-Max :

0.0033Ohm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AD

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

55V

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

600 mJ

Factory Lead Time :

28 Weeks