IXTH260N055T2
- Mfr.Part #
- IXTH260N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 260A TO247
- Stock
- 35
- In Stock :
- 35
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 175 C
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Package :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Package / Case :
- TO-247-3
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 50A, 10V
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Factory Lead Time :
- 28 Weeks
- Base Product Number :
- IXTH260
- Number of Elements :
- 1
- Power Dissipation-Max :
- 480W Tc
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection :
- DRAIN
- Tradename :
- HiPerFET
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.0033Ohm
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- TrenchT2™
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 480W (Tc)
- Continuous Drain Current (ID) :
- 260A
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 780A
- Supplier Device Package :
- TO-247 (IXTH)
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 260A Tc
- Mounting Type :
- Through Hole
- Datasheets
- IXTH260N055T2
IXTH260N055T2 Documents
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N-Channel Tube 3.3m Ω @ 50A, 10V ±20V 10800pF @ 25V 140nC @ 10V 55V TO-247-3
IXTH260N055T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 260A amps.As far as peak drain current is concerned, its maximum pulsed current is 780A.The DS breakdown voltage should be maintained above 55V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH260N055T2 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 260A
based on its rated peak drain current 780A.
a 55V drain to source voltage (Vdss)
IXTH260N055T2 Applications
There are a lot of IXYS
IXTH260N055T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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