IXTH22N50P
- Mfr.Part #
- IXTH22N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO247
- Stock
- 7,384
- In Stock :
- 7,384
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Tradename :
- PolarHV
- Type :
- PolarHV Power MOSFET
- Drain-source On Resistance-Max :
- 0.27Ohm
- Base Product Number :
- IXTH22
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 500 V
- Continuous Drain Current (ID) :
- 22A
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 350W (Tc)
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 22 A
- Package :
- Tube
- Height :
- 21.46 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Supplier Device Package :
- TO-247 (IXTH)
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 27ns
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Length :
- 16.26 mm
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- RoHS :
- Details
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 75 ns
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Element Configuration :
- Single
- Fall Time (Typ) :
- 21 ns
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Reach Compliance Code :
- Compliant
- Series :
- PolarHV™
- Product Type :
- MOSFET
- Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Power Dissipation-Max :
- 350W Tc
- Number of Terminations :
- 3
- FET Feature :
- --
- Case Connection :
- DRAIN
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5.3 mm
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- Power Dissipation :
- 350W
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 350 W
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTH22N50P

N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-247-3
IXTH22N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2630pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 22 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH22N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTH22N50P Applications
There are a lot of IXYS
IXTH22N50P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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