IXTH22N50P

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Mfr.Part #
IXTH22N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 22A TO247
Stock
7,384
In Stock :
7,384

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Manufacturer :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Tradename :
PolarHV
Type :
PolarHV Power MOSFET
Drain-source On Resistance-Max :
0.27Ohm
Base Product Number :
IXTH22
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
50A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DS Breakdown Voltage-Min :
500 V
Continuous Drain Current (ID) :
22A
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Product Status :
Active
Avalanche Energy Rating (Eas) :
750 mJ
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Product Category :
MOSFET
Power Dissipation (Max) :
350W (Tc)
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
500V
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
22 A
Package :
Tube
Height :
21.46 mm
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Supplier Device Package :
TO-247 (IXTH)
JESD-30 Code :
R-PSFM-T3
Rise Time :
27ns
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Length :
16.26 mm
JEDEC-95 Code :
TO-247AD
Channel Mode :
Enhancement
Brand :
IXYS
RoHS :
Details
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
75 ns
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Element Configuration :
Single
Fall Time (Typ) :
21 ns
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Vgs (Max) :
±30V
Packaging :
Tube
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2630pF @ 25V
Reach Compliance Code :
Compliant
Series :
PolarHV™
Product Type :
MOSFET
Configuration :
Single
Transistor Type :
1 N-Channel
Published :
2006
Rds On (Max) @ Id, Vgs :
270m Ω @ 11A, 10V
Power Dissipation-Max :
350W Tc
Number of Terminations :
3
FET Feature :
--
Case Connection :
DRAIN
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Width :
5.3 mm
Pbfree Code :
yes
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
Power Dissipation :
350W
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Power Dissipation-Max (Abs) :
350 W
Drain to Source Voltage (Vdss) :
500V
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Package Shape :
RECTANGULAR
Datasheets
IXTH22N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH22N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Type:PolarHV Power MOSFET, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, IXTH22N50P pinout, IXTH22N50P datasheet PDF, IXTH22N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH22N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH22N50P


N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-247-3

IXTH22N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2630pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 22 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH22N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTH22N50P Applications


There are a lot of IXYS
IXTH22N50P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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