IXTH22N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.27Ohm

Product Status :

Active

Manufacturer :

IXYS

Brand :

IXYS

Lead Free :

Lead Free

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Package / Case :

TO-247-3

Type :

PolarHV Power MOSFET

Turn-Off Delay Time :

75 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 25V

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Series :

PolarHV™

Tradename :

PolarHV

Mounting Style :

Through Hole

Drain Current-Max (Abs) (ID) :

22 A

Transistor Element Material :

SILICON

Package :

Tube

Avalanche Energy Rating (Eas) :

750 mJ

Pulsed Drain Current-Max (IDM) :

50A

Rise Time :

27ns

Base Product Number :

IXTH22

Mounting Type :

Through Hole

Length :

16.26 mm

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Power Dissipation (Max) :

350W (Tc)

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

350 W

Height :

21.46 mm

Published :

2006

Qualification Status :

Not Qualified

Surface Mount :

No

Width :

5.3 mm

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Pin Count :

3

Transistor Type :

1 N-Channel

Element Configuration :

Single

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

22A

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

DS Breakdown Voltage-Min :

500 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e1

Supplier Device Package :

TO-247 (IXTH)

Vgs(th) (Max) @ Id :

5.5V @ 250µA

FET Feature :

--

FET Type :

N-Channel

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

500V

Mount :

Through Hole

Power Dissipation-Max :

350W Tc

Power Dissipation :

350W

Drain to Source Breakdown Voltage :

500V

Factory Lead Time :

28 Weeks

Fall Time (Typ) :

21 ns

Operating Mode :

ENHANCEMENT MODE