IXTH21N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

500V

Series :

HiPerFET™

DS Breakdown Voltage-Min :

500V

Number of Terminations :

3

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Package :

Tube

Drain-source On Resistance-Max :

0.25Ohm

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-247AD (IXTH)

Qualification Status :

Not Qualified

Number of Terminals :

3

Package / Case :

TO-247-3

Avalanche Energy Rating (Eas) :

1.5 mJ

JEDEC-95 Code :

TO-247AD

Power Dissipation-Max :

300W Tc

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

21A

RoHS Status :

RoHS Compliant

Base Product Number :

IXTH21

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Product Status :

Obsolete

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

250m Ω @ 10.5A, 10V

Package Shape :

RECTANGULAR

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Manufacturer :

IXYS Corporation

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

84A

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V