IXTH21N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTH21

Packaging :

Tube

Power Dissipation Ambient-Max :

300 W

Power Dissipation (Max) :

300W (Tc)

Drain-source On Resistance-Max :

0.25 Ω

Qualification Status :

Not Qualified

Pbfree Code :

yes

Channel Mode :

Enhancement

Surface Mount :

No

Drain to Source Breakdown Voltage :

500V

DS Breakdown Voltage-Min :

500 V

Power Dissipation :

300W

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Power Dissipation-Max (Abs) :

250 W

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

65 ns

Brand :

IXYS

Supplier Device Package :

TO-247 (IXTH)

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

21A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

21 A

Mount :

Through Hole

Product Category :

MOSFET

Resistance :

250mOhm

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Terminal Position :

Single

Width :

5.3 mm

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Rise Time :

33ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Product Status :

Not For New Designs

Case Connection :

DRAIN

Mounting Type :

Through Hole

Height :

21.46 mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

250m Ω @ 10.5A, 10V

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MegaMOS™

Pulsed Drain Current-Max (IDM) :

84A

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

30 ns

JEDEC-95 Code :

TO-247AD

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Terminal Form :

THROUGH-HOLE

Published :

2000

FET Feature :

--

Configuration :

Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Length :

16.26 mm

Minimum Operating Temperature :

- 55 C

Number of Terminals :

3

Transistor Element Material :

SILICON