IXTH21N50

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Mfr.Part #
IXTH21N50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 21A TO247
Stock
592
In Stock :
592

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTH21
Packaging :
Tube
Power Dissipation Ambient-Max :
300 W
Power Dissipation (Max) :
300W (Tc)
Drain-source On Resistance-Max :
0.25 Ω
Qualification Status :
Not Qualified
Pbfree Code :
yes
Channel Mode :
Enhancement
Surface Mount :
No
Drain to Source Breakdown Voltage :
500V
DS Breakdown Voltage-Min :
500 V
Power Dissipation :
300W
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Power Dissipation-Max (Abs) :
250 W
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
65 ns
Brand :
IXYS
Supplier Device Package :
TO-247 (IXTH)
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
21A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
21 A
Mount :
Through Hole
Product Category :
MOSFET
Resistance :
250mOhm
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Terminal Position :
Single
Width :
5.3 mm
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Drain to Source Voltage (Vdss) :
500V
Pin Count :
3
Rise Time :
33ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Product Status :
Not For New Designs
Case Connection :
DRAIN
Mounting Type :
Through Hole
Height :
21.46 mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
250m Ω @ 10.5A, 10V
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
MegaMOS™
Pulsed Drain Current-Max (IDM) :
84A
Power Dissipation-Max :
300W Tc
Fall Time (Typ) :
30 ns
JEDEC-95 Code :
TO-247AD
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Type :
MOSFET
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
8 Weeks
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Terminal Form :
THROUGH-HOLE
Published :
2000
FET Feature :
--
Configuration :
Single
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Length :
16.26 mm
Minimum Operating Temperature :
- 55 C
Number of Terminals :
3
Transistor Element Material :
SILICON
Datasheets
IXTH21N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH21N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, IXTH21N50 pinout, IXTH21N50 datasheet PDF, IXTH21N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH21N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH21N50


N-Channel Tube 250m Ω @ 10.5A, 10V ±20V 4200pF @ 25V 190nC @ 10V 500V TO-247-3

IXTH21N50 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH21N50 Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)


IXTH21N50 Applications


There are a lot of IXYS
IXTH21N50 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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