IXTH20P50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

JESD-609 Code :

e1

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Package :

Tube

Base Product Number :

IXTH20

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Element Configuration :

Single

Transistor Polarity :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

80 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Mount :

Through Hole

Supplier Device Package :

TO-247 (IXTH)

Input Capacitance (Ciss) (Max) @ Vds :

5120pF @ 25V

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

450m Ω @ 10A, 10V

Power Dissipation (Max) :

460W (Tc)

Transistor Type :

1 P-Channel

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-247-3

Series :

PolarP™

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

460 W

Channel Mode :

Enhancement

Manufacturer :

IXYS

Number of Terminals :

3

Power Dissipation-Max :

460W Tc

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Surface Mount :

No

Rise Time :

32 ns

Drain Current-Max (Abs) (ID) :

20 A

Product Type :

MOSFET

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

2500 mJ

Brand :

IXYS

Terminal Position :

Single

FET Type :

P-Channel

Factory Lead Time :

28 Weeks

Continuous Drain Current (ID) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-500V

Polarity/Channel Type :

P-Channel

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Status :

Active

Drain-source On Resistance-Max :

0.45Ohm

Power Dissipation :

460W

Pulsed Drain Current-Max (IDM) :

60A

Configuration :

Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Style :

Through Hole

RoHS :

Details

JEDEC-95 Code :

TO-247

Minimum Operating Temperature :

- 55 C

Published :

2009

Transistor Element Material :

SILICON

FET Feature :

--

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500 V

Packaging :

Tube