IXTH20P50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

460W

Minimum Operating Temperature :

- 55 C

Configuration :

Single

DS Breakdown Voltage-Min :

500 V

Rds On (Max) @ Id, Vgs :

450m Ω @ 10A, 10V

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

60A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Supplier Device Package :

TO-247 (IXTH)

Terminal Position :

Single

Rise Time :

32 ns

Turn-Off Delay Time :

80 ns

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

5120pF @ 25V

RoHS :

Details

Power Dissipation (Max) :

460W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Polarity/Channel Type :

P-Channel

Pin Count :

3

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

460 W

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Manufacturer :

IXYS

JEDEC-95 Code :

TO-247

Base Product Number :

IXTH20

FET Feature :

--

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Continuous Drain Current (ID) :

20A

Drain Current-Max (Abs) (ID) :

20 A

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

2500 mJ

Published :

2009

Drain to Source Breakdown Voltage :

-500V

Package :

Tube

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Product Type :

MOSFET

Mounting Type :

Through Hole

Mounting Style :

Through Hole

Pbfree Code :

yes

Product Category :

MOSFET

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.45Ohm

FET Type :

P-Channel

Transistor Type :

1 P-Channel

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

500V

Series :

PolarP™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Reach Compliance Code :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

28 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

P-Channel

Power Dissipation-Max :

460W Tc