IXTH20P50P

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Mfr.Part #
IXTH20P50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO247
Stock
5,250
In Stock :
5,250

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
Continuous Drain Current (ID) :
20A
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
20 A
Pulsed Drain Current-Max (IDM) :
60A
Published :
2009
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.45Ohm
Vgs(th) (Max) @ Id :
4V @ 250µA
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
500V
Surface Mount :
No
Avalanche Energy Rating (Eas) :
2500 mJ
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
80 ns
RoHS Status :
ROHS3 Compliant
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-247
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
Transistor Type :
1 P-Channel
Polarity/Channel Type :
P-Channel
Product Category :
MOSFET
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
DS Breakdown Voltage-Min :
500 V
Power Dissipation (Max) :
460W (Tc)
Product Status :
Active
Rise Time :
32 ns
RoHS :
Details
Package Shape :
RECTANGULAR
Terminal Position :
Single
JESD-609 Code :
e1
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
-500V
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
Factory Lead Time :
28 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
Product Type :
MOSFET
FET Feature :
--
Element Configuration :
Single
Power Dissipation-Max :
460W Tc
Power Dissipation-Max (Abs) :
460 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Pin Count :
3
Number of Terminations :
3
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Base Product Number :
IXTH20
Transistor Polarity :
P-Channel
Supplier Device Package :
TO-247 (IXTH)
Packaging :
Tube
Power Dissipation :
460W
Number of Elements :
1
Mount :
Through Hole
Series :
PolarP™
Number of Terminals :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20P50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, IXTH20P50P pinout, IXTH20P50P datasheet PDF, IXTH20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-247-3

IXTH20P50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTH20P50P Applications


There are a lot of IXYS
IXTH20P50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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