IXTH20P50P
- Mfr.Part #
- IXTH20P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 20A TO247
- Stock
- 5,250
- In Stock :
- 5,250
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 10A, 10V
- Continuous Drain Current (ID) :
- 20A
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 20 A
- Pulsed Drain Current-Max (IDM) :
- 60A
- Published :
- 2009
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.45Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 80 ns
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-247
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 P-Channel
- Polarity/Channel Type :
- P-Channel
- Product Category :
- MOSFET
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation (Max) :
- 460W (Tc)
- Product Status :
- Active
- Rise Time :
- 32 ns
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- -500V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 28 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 5120pF @ 25V
- Product Type :
- MOSFET
- FET Feature :
- --
- Element Configuration :
- Single
- Power Dissipation-Max :
- 460W Tc
- Power Dissipation-Max (Abs) :
- 460 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Pin Count :
- 3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTH20
- Transistor Polarity :
- P-Channel
- Supplier Device Package :
- TO-247 (IXTH)
- Packaging :
- Tube
- Power Dissipation :
- 460W
- Number of Elements :
- 1
- Mount :
- Through Hole
- Series :
- PolarP™
- Number of Terminals :
- 3
- Datasheets
- IXTH20P50P
IXTH20P50P Documents
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P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-247-3
IXTH20P50P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH20P50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTH20P50P Applications
There are a lot of IXYS
IXTH20P50P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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