IXTH20N60

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Mfr.Part #
IXTH20N60
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 20A TO247
Stock
29,779
In Stock :
29,779

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
20 A
RoHS :
Details
Resistance :
350mOhm
Transistor Element Material :
SILICON
Number of Terminals :
3
Product Category :
MOSFET
Series :
MegaMOS™
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
300W (Tc)
Published :
2000
Width :
5.3 mm
Drain-Source On-Volt :
600(V)
Manufacturer :
IXYS
Package / Case :
TO-247-3
Package :
Tube
Configuration :
Single
Type :
Power MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
JEDEC-95 Code :
TO-247AD
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Height :
21.46 mm
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Number of Elements :
1
Terminal Position :
Single
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
80A
DS Breakdown Voltage-Min :
600 V
Base Product Number :
IXTH20
Rad Hardened :
No
Power Dissipation-Max :
300W Tc
Power Dissipation Ambient-Max :
300 W
Transistor Type :
1 N-Channel
Vgs (Max) :
±20V
Current Rating :
20A
Package Type :
TO-247AD
Drain-source On Resistance-Max :
0.35 Ω
Transistor Application :
SWITCHING
Factory Lead Time :
8 Weeks
Transistor Polarity :
N-Channel
Rise Time :
43ns
Mount :
Through Hole
Package Shape :
RECTANGULAR
Number of Terminations :
3
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Mounting :
Through Hole
Moisture Sensitivity Level (MSL) :
Not Applicable
Continuous Drain Current :
20(A)
Supplier Device Package :
TO-247 (IXTH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Gate-Source Voltage (Max) :
±20(V)
Polarity :
N
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
Rds On (Max) @ Id, Vgs :
350m Ω @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Power Dissipation-Max (Abs) :
300 W
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Power Dissipation :
300W
Operating Temp Range :
-55C to 150C
Qualification Status :
Not Qualified
Mounting Style :
Through Hole
Turn-Off Delay Time :
70 ns
Length :
16.26 mm
Continuous Drain Current (ID) :
20A
Packaging :
Tube
Drain to Source Breakdown Voltage :
600V
Operating Temperature Classification :
Military
Case Connection :
Isolated
Fall Time (Typ) :
40 ns
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Voltage - Rated DC :
600V
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Number of Pins :
3
Datasheets
IXTH20N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Type:Power MOSFET, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTH20N60 pinout, IXTH20N60 datasheet PDF, IXTH20N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20N60


N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3

IXTH20N60 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH20N60 Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTH20N60 Applications


There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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