IXTH20N60

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Mfr.Part #
IXTH20N60
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 20A TO247
Stock
29,779
In Stock :
29,779

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate-Source Voltage (Max) :
±20(V)
Resistance :
350mOhm
Mounting Type :
Through Hole
Factory Lead Time :
8 Weeks
Number of Elements :
1
Mount :
Through Hole
Case Connection :
Isolated
Current - Continuous Drain (Id) @ 25°C :
20A Tc
FET Feature :
--
DS Breakdown Voltage-Min :
600 V
Current Rating :
20A
Drain Current-Max (Abs) (ID) :
20 A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
43ns
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Terminations :
3
Product Status :
Active
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Drain to Source Voltage (Vdss) :
600V
Rds On (Max) @ Id, Vgs :
350m Ω @ 10A, 10V
Operating Temperature Classification :
Military
Operating Temp Range :
-55C to 150C
Package Type :
TO-247AD
Rad Hardened :
No
Continuous Drain Current :
20(A)
Turn-Off Delay Time :
70 ns
Moisture Sensitivity Level (MSL) :
Not Applicable
Drain to Source Breakdown Voltage :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Number of Terminals :
3
Radiation Hardening :
No
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
Power Dissipation-Max (Abs) :
300 W
Published :
2000
Series :
MegaMOS™
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
80A
Manufacturer :
IXYS
RoHS :
Details
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Drain-Source On-Volt :
600(V)
Height :
21.46 mm
Polarity :
N
Continuous Drain Current (ID) :
20A
Type :
Power MOSFET
Supplier Device Package :
TO-247 (IXTH)
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
Package :
Tube
JEDEC-95 Code :
TO-247AD
Terminal Position :
Single
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Qualification Status :
Not Qualified
Power Dissipation Ambient-Max :
300 W
Package / Case :
TO-247-3
Pin Count :
3
Width :
5.3 mm
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Configuration :
Single
Voltage - Rated DC :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Packaging :
Tube
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Mounting :
Through Hole
Fall Time (Typ) :
40 ns
Drain-source On Resistance-Max :
0.35 Ω
Base Product Number :
IXTH20
Number of Pins :
3
Transistor Application :
SWITCHING
Power Dissipation (Max) :
300W (Tc)
Surface Mount :
No
Product Category :
MOSFET
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Power Dissipation :
300W
Length :
16.26 mm
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Datasheets
IXTH20N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:3, IXTH20N60 pinout, IXTH20N60 datasheet PDF, IXTH20N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20N60


N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3

IXTH20N60 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH20N60 Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTH20N60 Applications


There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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