IXTH20N60
- Mfr.Part #
- IXTH20N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247
- Stock
- 29,779
- In Stock :
- 29,779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate-Source Voltage (Max) :
- ±20(V)
- Resistance :
- 350mOhm
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600 V
- Current Rating :
- 20A
- Drain Current-Max (Abs) (ID) :
- 20 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 43ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Terminations :
- 3
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 10A, 10V
- Operating Temperature Classification :
- Military
- Operating Temp Range :
- -55C to 150C
- Package Type :
- TO-247AD
- Rad Hardened :
- No
- Continuous Drain Current :
- 20(A)
- Turn-Off Delay Time :
- 70 ns
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Radiation Hardening :
- No
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Power Dissipation-Max (Abs) :
- 300 W
- Published :
- 2000
- Series :
- MegaMOS™
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 80A
- Manufacturer :
- IXYS
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Drain-Source On-Volt :
- 600(V)
- Height :
- 21.46 mm
- Polarity :
- N
- Continuous Drain Current (ID) :
- 20A
- Type :
- Power MOSFET
- Supplier Device Package :
- TO-247 (IXTH)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Power Dissipation-Max :
- 300W Tc
- Package :
- Tube
- JEDEC-95 Code :
- TO-247AD
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Power Dissipation Ambient-Max :
- 300 W
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Width :
- 5.3 mm
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Mounting :
- Through Hole
- Fall Time (Typ) :
- 40 ns
- Drain-source On Resistance-Max :
- 0.35 Ω
- Base Product Number :
- IXTH20
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 300W (Tc)
- Surface Mount :
- No
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 300W
- Length :
- 16.26 mm
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTH20N60
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N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3
IXTH20N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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