IXTH20N60
- Mfr.Part #
- IXTH20N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247
- Stock
- 29,779
- In Stock :
- 29,779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 20 A
- RoHS :
- Details
- Resistance :
- 350mOhm
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Series :
- MegaMOS™
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 300W (Tc)
- Published :
- 2000
- Width :
- 5.3 mm
- Drain-Source On-Volt :
- 600(V)
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- Package :
- Tube
- Configuration :
- Single
- Type :
- Power MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- JEDEC-95 Code :
- TO-247AD
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Height :
- 21.46 mm
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 80A
- DS Breakdown Voltage-Min :
- 600 V
- Base Product Number :
- IXTH20
- Rad Hardened :
- No
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation Ambient-Max :
- 300 W
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±20V
- Current Rating :
- 20A
- Package Type :
- TO-247AD
- Drain-source On Resistance-Max :
- 0.35 Ω
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Transistor Polarity :
- N-Channel
- Rise Time :
- 43ns
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Mounting :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Continuous Drain Current :
- 20(A)
- Supplier Device Package :
- TO-247 (IXTH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Gate-Source Voltage (Max) :
- ±20(V)
- Polarity :
- N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Power Dissipation-Max (Abs) :
- 300 W
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation :
- 300W
- Operating Temp Range :
- -55C to 150C
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- Length :
- 16.26 mm
- Continuous Drain Current (ID) :
- 20A
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature Classification :
- Military
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 40 ns
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Voltage - Rated DC :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Pins :
- 3
- Datasheets
- IXTH20N60
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N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3
IXTH20N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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