IXTH20N60

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Mfr.Part #
IXTH20N60
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 20A TO247
Stock
29,779
In Stock :
29,779

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Factory Lead Time :
8 Weeks
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
600V
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
80A
Power Dissipation :
300W
Power Dissipation-Max :
300W Tc
Current Rating :
20A
Package / Case :
TO-247-3
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
20 A
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temp Range :
-55C to 150C
Drain-source On Resistance-Max :
0.35 Ω
Product Category :
MOSFET
Height :
21.46 mm
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
Not Applicable
DS Breakdown Voltage-Min :
600 V
Mounting :
Through Hole
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 150 C
Gate-Source Voltage (Max) :
±20(V)
Product Type :
MOSFET
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Width :
5.3 mm
Rds On (Max) @ Id, Vgs :
350m Ω @ 10A, 10V
Package :
Tube
Element Configuration :
Single
JEDEC-95 Code :
TO-247AD
Published :
2000
Number of Channels :
1 Channel
Pbfree Code :
yes
Length :
16.26 mm
Channel Mode :
Enhancement
Power Dissipation Ambient-Max :
300 W
Configuration :
Single
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Resistance :
350mOhm
Radiation Hardening :
No
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Fall Time (Typ) :
40 ns
Rad Hardened :
No
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Number of Terminations :
3
Brand :
IXYS
Product Status :
Active
Qualification Status :
Not Qualified
Supplier Device Package :
TO-247 (IXTH)
Pin Count :
3
Package Type :
TO-247AD
Manufacturer :
IXYS
Rise Time :
43ns
Continuous Drain Current (ID) :
20A
Drain-Source On-Volt :
600(V)
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Vgs (Max) :
±20V
Power Dissipation-Max (Abs) :
300 W
Power Dissipation (Max) :
300W (Tc)
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Continuous Drain Current :
20(A)
Base Product Number :
IXTH20
Type :
Power MOSFET
Gate to Source Voltage (Vgs) :
20V
Polarity :
N
Series :
MegaMOS™
Drain to Source Breakdown Voltage :
600V
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Turn-Off Delay Time :
70 ns
Lead Free :
Lead Free
Operating Temperature Classification :
Military
Case Connection :
Isolated
Voltage - Rated DC :
600V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Type:Power MOSFET, IXTH20N60 pinout, IXTH20N60 datasheet PDF, IXTH20N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20N60


N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3

IXTH20N60 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH20N60 Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTH20N60 Applications


There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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