IXTH20N60
- Mfr.Part #
- IXTH20N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247
- Stock
- 29,779
- In Stock :
- 29,779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 80A
- Power Dissipation :
- 300W
- Power Dissipation-Max :
- 300W Tc
- Current Rating :
- 20A
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 20 A
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temp Range :
- -55C to 150C
- Drain-source On Resistance-Max :
- 0.35 Ω
- Product Category :
- MOSFET
- Height :
- 21.46 mm
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- DS Breakdown Voltage-Min :
- 600 V
- Mounting :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- Gate-Source Voltage (Max) :
- ±20(V)
- Product Type :
- MOSFET
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Width :
- 5.3 mm
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 10A, 10V
- Package :
- Tube
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247AD
- Published :
- 2000
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Length :
- 16.26 mm
- Channel Mode :
- Enhancement
- Power Dissipation Ambient-Max :
- 300 W
- Configuration :
- Single
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Resistance :
- 350mOhm
- Radiation Hardening :
- No
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 40 ns
- Rad Hardened :
- No
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Brand :
- IXYS
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-247 (IXTH)
- Pin Count :
- 3
- Package Type :
- TO-247AD
- Manufacturer :
- IXYS
- Rise Time :
- 43ns
- Continuous Drain Current (ID) :
- 20A
- Drain-Source On-Volt :
- 600(V)
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Continuous Drain Current :
- 20(A)
- Base Product Number :
- IXTH20
- Type :
- Power MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity :
- N
- Series :
- MegaMOS™
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Turn-Off Delay Time :
- 70 ns
- Lead Free :
- Lead Free
- Operating Temperature Classification :
- Military
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 600V
- Datasheets
- IXTH20N60
IXTH20N60 Documents
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N-Channel Tube 350m Ω @ 10A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-247-3
IXTH20N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 20 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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