IXTH200N10T
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- Mfr.Part #
- IXTH200N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO247
- Stock
- 97
- In Stock ：
- 97
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±30V
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 550W Tc
- Continuous Drain Current (ID) :
- 200A
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 550W (Tc)
- Supplier Device Package :
- TO-247 (IXTH)
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 34 ns
- Width :
- 5.3 mm
- Maximum Operating Temperature :
- + 175 C
- Product Status :
- Active
- Series :
- TrenchMV™
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 31ns
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTH200
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Length :
- 16.26 mm
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- RoHS :
- Details
- Factory Lead Time :
- 28 Weeks
- Number of Terminations :
- 3
- Power Dissipation :
- 550W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Configuration :
- Single
- Height :
- 21.46 mm
- Turn-Off Delay Time :
- 45 ns
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2008
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 500A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- FET Feature :
- --
- Lead Free :
- Lead Free
- Package :
- Tube
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Resistance :
- 5.5mOhm
- Tradename :
- HiPerFET
- Channel Mode :
- Enhancement
- Datasheets
- IXTH200N10T
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N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V 100V TO-247-3
IXTH200N10T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 500A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH200N10T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTH200N10T Applications
There are a lot of IXYS
IXTH200N10T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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