IXTH200N10T
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- Mfr.Part #
- IXTH200N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO247
- Stock
- 97
- In Stock ：
- 97
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Resistance :
- 5.5mOhm
- Package / Case :
- TO-247-3
- Published :
- 2008
- Supplier Device Package :
- TO-247 (IXTH)
- Brand :
- IXYS
- Base Product Number :
- IXTH200
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Length :
- 16.26 mm
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 550W
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Packaging :
- Tube
- Tradename :
- HiPerFET
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Width :
- 5.3 mm
- JESD-609 Code :
- e1
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 21.46 mm
- Turn-Off Delay Time :
- 45 ns
- Continuous Drain Current (ID) :
- 200A
- Pulsed Drain Current-Max (IDM) :
- 500A
- Reach Compliance Code :
- Unknown
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 100V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Mounting Type :
- Through Hole
- Rise Time :
- 31ns
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Number of Elements :
- 1
- Power Dissipation-Max :
- 550W Tc
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 34 ns
- Power Dissipation (Max) :
- 550W (Tc)
- Series :
- TrenchMV™
- Datasheets
- IXTH200N10T
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N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V 100V TO-247-3
IXTH200N10T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 500A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH200N10T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTH200N10T Applications
There are a lot of IXYS
IXTH200N10T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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