IXTH200N085T

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Mfr.Part #
IXTH200N085T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 85V 200A TO247
Stock
6,897
In Stock :
6,897

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Subcategory :
MOSFETs
Power Dissipation-Max :
480W Tc
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
65 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
85V
Additional Feature :
AVALANCHE RATED
Number of Terminals :
3
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
4V @ 250µA
Pin Count :
3
Packaging :
Tube
Pbfree Code :
yes
Product Type :
MOSFET
RoHS Status :
RoHS Compliant
Height :
21.46 mm
Mount :
Through Hole
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
480W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Drain-source On Resistance-Max :
0.005ohm
Pulsed Drain Current-Max (IDM) :
540A
Rise Time :
80ns
Product Category :
MOSFET
Length :
16.26 mm
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
85 V
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Terminal Position :
Single
Number of Elements :
1
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
200A
Maximum Operating Temperature :
+ 175 C
Package :
Tube
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
480W (Tc)
Supplier Device Package :
TO-247 (IXTH)
Series :
TrenchMV™
JESD-609 Code :
e1
Product Status :
Obsolete
ECCN Code :
EAR99
FET Type :
N-Channel
Surface Mount :
No
Operating Temperature :
-55°C~175°C TJ
Published :
2006
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
85V
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Element Configuration :
Single
Width :
5.3 mm
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Base Product Number :
IXTH200
Fall Time (Typ) :
64 ns
Number of Channels :
1 Channel
Configuration :
Single
Package / Case :
TO-247-3
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
1000 mJ
Datasheets
IXTH200N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH200N085T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, IXTH200N085T pinout, IXTH200N085T datasheet PDF, IXTH200N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH200N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH200N085T


N-Channel Tube 5m Ω @ 25A, 10V ±20V 7600pF @ 25V 152nC @ 10V 85V TO-247-3

IXTH200N085T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 540A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 85 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 85V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH200N085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 540A.
a 85V drain to source voltage (Vdss)


IXTH200N085T Applications


There are a lot of IXYS
IXTH200N085T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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