IXTH200N085T
- Mfr.Part #
- IXTH200N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 200A TO247
- Stock
- 6,897
- In Stock :
- 6,897
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Subcategory :
- MOSFETs
- Power Dissipation-Max :
- 480W Tc
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 65 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 85V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-247AD
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- Packaging :
- Tube
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- RoHS Status :
- RoHS Compliant
- Height :
- 21.46 mm
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 480W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.005ohm
- Pulsed Drain Current-Max (IDM) :
- 540A
- Rise Time :
- 80ns
- Product Category :
- MOSFET
- Length :
- 16.26 mm
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 85 V
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 200A
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 480W (Tc)
- Supplier Device Package :
- TO-247 (IXTH)
- Series :
- TrenchMV™
- JESD-609 Code :
- e1
- Product Status :
- Obsolete
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Surface Mount :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2006
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 85V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Width :
- 5.3 mm
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Base Product Number :
- IXTH200
- Fall Time (Typ) :
- 64 ns
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Package / Case :
- TO-247-3
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXTH200N085T
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N-Channel Tube 5m Ω @ 25A, 10V ±20V 7600pF @ 25V 152nC @ 10V 85V TO-247-3
IXTH200N085T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 540A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 85 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 85V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH200N085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 540A.
a 85V drain to source voltage (Vdss)
IXTH200N085T Applications
There are a lot of IXYS
IXTH200N085T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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