IXTH1N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4V @ 250µA

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Lead Free :

Lead Free

Length :

16.26 mm

Rds On Max :

40 Ω

Brand :

IXYS

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Product Type :

MOSFET

Min Operating Temperature :

-55 °C

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.5 A

Current - Continuous Drain (Id) @ 25°C :

1.5A (Tc)

Number of Pins :

3

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Drain to Source Breakdown Voltage :

2.5 kV

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Type :

Power MOSFET

Terminal Position :

Single

JEDEC-95 Code :

TO-247AD

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

6 A

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

132 ns

Input Capacitance :

1.66 nF

Gate to Source Voltage (Vgs) :

20 V

Max Operating Temperature :

150 °C

Technology :

Si

RoHS :

Details

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

40Ohm @ 750mA, 10V

Configuration :

Single

Power Dissipation-Max (Abs) :

250 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

1.5 A

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Number of Terminals :

3

Package :

Tube

Radiation Hardening :

No

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Height :

21.46 mm

Drain to Source Voltage (Vdss) :

2.5 kV

Drain to Source Resistance :

40 Ω

Max Power Dissipation :

250 W

Input Capacitance (Ciss) (Max) @ Vds :

1660 pF @ 25 V

Width :

5.3 mm

Product Category :

MOSFET

Product Status :

Active

Power Dissipation :

250 W

Case Connection :

DRAIN

Qualification Status :

Not Qualified

FET Feature :

-

FET Type :

N-Channel

Supplier Device Package :

TO-247AD

Drain-source On Resistance-Max :

40 Ω

DS Breakdown Voltage-Min :

2500 V

Series :

IXTH1N250

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Rise Time :

25 ns

Mounting Style :

Through Hole