IXTH1N200P3HV

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Mfr.Part #
IXTH1N200P3HV
Manufacturer
Littelfuse
Package / Case
TO-247-3 Variant
Datasheet
Download
Description
MOSFET N-CH 2000V 1A TO247HV
Stock
2,673
In Stock :
2,673

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Operating Temperature :
-55°C~150°C TJ
Published :
2014
Rise Time :
26 ns
Continuous Drain Current (ID) :
1A
Drain to Source Voltage (Vdss) :
2000V
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
40 Ω @ 500mA, 10V
Channel Mode :
Enhancement
Product Type :
MOSFET
Package / Case :
TO-247-3 Variant
Supplier Device Package :
TO-247HV
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Mount :
Through Hole
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
125W (Tc)
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
23.5nC @ 10V
Vgs (Max) :
±20V
Power Dissipation-Max :
125W Tc
FET Type :
N-Channel
Base Product Number :
IXTH1
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
--
Packaging :
Tube
Subcategory :
MOSFETs
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Configuration :
Single
Factory Lead Time :
24 Weeks
FET Feature :
--
Package :
Tube
Product Category :
MOSFET
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
646pF @ 25V
Datasheets
IXTH1N200P3HV
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH1N200P3HV from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3 Variant, Mounting Type:Through Hole, IXTH1N200P3HV pinout, IXTH1N200P3HV datasheet PDF, IXTH1N200P3HV amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH1N200P3HV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH1N200P3HV


N-Channel Tube 40 Ω @ 500mA, 10V ±20V 646pF @ 25V 23.5nC @ 10V 2000V TO-247-3 Variant

IXTH1N200P3HV Overview


The maximum input capacitance of this device is 646pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.The drain-to-source voltage (Vdss) of this transistor needs to be at 2000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH1N200P3HV Features


a continuous drain current (ID) of 1A
a 2000V drain to source voltage (Vdss)


IXTH1N200P3HV Applications


There are a lot of IXYS
IXTH1N200P3HV applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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