IXTH16P20
- Mfr.Part #
- IXTH16P20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 16A TO247
- Stock
- 2,698
- In Stock :
- 2,698
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.16Ohm
- FET Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-247-3
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTH16
- Power Dissipation (Max) :
- 300W (Tc)
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Type :
- Standard Power MOSFET
- Manufacturer :
- IXYS
- Max Operating Temperature :
- 150 °C
- Turn-Off Delay Time :
- 65 ns
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 P-Channel
- Reach Compliance Code :
- Compliant
- RoHS :
- Compliant
- Drain to Source Breakdown Voltage :
- -200V
- Min Operating Temperature :
- -55 °C
- Published :
- 2004
- Max Power Dissipation :
- 300 W
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 300W
- Polarity/Channel Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 500mA, 10V
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 200 V
- Width :
- 5.3 mm
- Drain to Source Resistance :
- 160 mΩ
- Number of Elements :
- 1
- Transistor Polarity :
- P-Channel
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Product Status :
- Active
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 16 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- FET Feature :
- --
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 180 W
- Rise Time :
- 26ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Packaging :
- Tube
- Supplier Device Package :
- TO-247 (IXTH)
- Input Capacitance :
- 2.8 nF
- Brand :
- IXYS
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Package :
- Tube
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 64A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- --
- Pin Count :
- 3
- Length :
- 16.26 mm
- JEDEC-95 Code :
- TO-247AD
- Height :
- 21.46 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 16A
- Rds On Max :
- 160 mΩ
- Datasheets
- IXTH16P20
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P-Channel Tube 160m Ω @ 500mA, 10V ±20V 2800pF @ 25V 95nC @ 10V 200V TO-247-3
IXTH16P20 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2800pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 16 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 64A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 160 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH16P20 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 64A.
single MOSFETs transistor is 160 mΩ
a 200V drain to source voltage (Vdss)
IXTH16P20 Applications
There are a lot of IXYS
IXTH16P20 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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