IXTH15N50L2

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Mfr.Part #
IXTH15N50L2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 15A TO247
Stock
66,319
In Stock :
66,319

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
Linear L2™
RoHS :
Details
Input Capacitance :
4.08 nF
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Qualification Status :
Not Qualified
Mounting Style :
Through Hole
Polarity/Channel Type :
N-Channel
Pin Count :
3
Supplier Device Package :
TO-247 (IXTH)
Number of Terminals :
3
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Number of Elements :
1
Max Operating Temperature :
150 °C
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
Drain-source On Resistance-Max :
0.48Ohm
Input Capacitance (Ciss) (Max) @ Vds :
4080pF @ 25V
Packaging :
Tube
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500V
Power Dissipation-Max (Abs) :
300 W
Product Type :
MOSFET
Package :
Tube
Rds On (Max) @ Id, Vgs :
480m Ω @ 7.5A, 10V
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Power Dissipation :
300W
Case Connection :
DRAIN
Nominal Vgs :
2.5 V
Transistor Polarity :
N-Channel
Min Operating Temperature :
-55 °C
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-247
Manufacturer :
IXYS
Max Power Dissipation :
300 W
Number of Pins :
3
Brand :
IXYS
Vgs (Max) :
±20V
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
500V
Gate Charge (Qg) (Max) @ Vgs :
123nC @ 10V
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
15A
Surface Mount :
No
Avalanche Energy Rating (Eas) :
750 mJ
Rds On Max :
480 mΩ
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
35 A
Power Dissipation (Max) :
300W (Tc)
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
15 A
Channel Mode :
Enhancement
Threshold Voltage :
2.5V
Base Product Number :
IXTH15
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
FET Feature :
--
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
JESD-609 Code :
e1
Terminal Position :
Single
Drain to Source Resistance :
480 mΩ
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Published :
2009
Datasheets
IXTH15N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH15N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH15N50L2 pinout, IXTH15N50L2 datasheet PDF, IXTH15N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH15N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH15N50L2


N-Channel Tube 480m Ω @ 7.5A, 10V ±20V 4080pF @ 25V 123nC @ 10V 500V TO-247-3

IXTH15N50L2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The maximum input capacitance of this device is 4080pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.As shown in the table below, the drain current of this device is 15 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 480 mΩ.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH15N50L2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 15A
based on its rated peak drain current 35 A.
single MOSFETs transistor is 480 mΩ
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTH15N50L2 Applications


There are a lot of IXYS
IXTH15N50L2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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