IXTH15N50L2
- Mfr.Part #
- IXTH15N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO247
- Stock
- 66,319
- In Stock :
- 66,319
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Linear L2™
- RoHS :
- Details
- Input Capacitance :
- 4.08 nF
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Max Operating Temperature :
- 150 °C
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- Drain-source On Resistance-Max :
- 0.48Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4080pF @ 25V
- Packaging :
- Tube
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 500V
- Power Dissipation-Max (Abs) :
- 300 W
- Product Type :
- MOSFET
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 7.5A, 10V
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 300W
- Case Connection :
- DRAIN
- Nominal Vgs :
- 2.5 V
- Transistor Polarity :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-247
- Manufacturer :
- IXYS
- Max Power Dissipation :
- 300 W
- Number of Pins :
- 3
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 15A
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Rds On Max :
- 480 mΩ
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 15 A
- Channel Mode :
- Enhancement
- Threshold Voltage :
- 2.5V
- Base Product Number :
- IXTH15
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Drain to Source Resistance :
- 480 mΩ
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Published :
- 2009
- Datasheets
- IXTH15N50L2
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N-Channel Tube 480m Ω @ 7.5A, 10V ±20V 4080pF @ 25V 123nC @ 10V 500V TO-247-3
IXTH15N50L2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The maximum input capacitance of this device is 4080pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.As shown in the table below, the drain current of this device is 15 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 480 mΩ.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH15N50L2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 15A
based on its rated peak drain current 35 A.
single MOSFETs transistor is 480 mΩ
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTH15N50L2 Applications
There are a lot of IXYS
IXTH15N50L2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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