IXTH150N17T

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Mfr.Part #
IXTH150N17T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 175V 150A TO247
Stock
34,232
In Stock :
34,232

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-247AD
Pin Count :
3
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Base Product Number :
IXTH150
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Manufacturer :
IXYS Corporation
Drain to Source Voltage (Vdss) :
175V
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
175 V
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
830 W
Power Dissipation (Max) :
830W (Tc)
JESD-609 Code :
e1
Packaging :
Tube
Package / Case :
TO-247-3
Published :
2008
Element Configuration :
Single
Series :
TrenchHV™
Rds On (Max) @ Id, Vgs :
12m Ω @ 75A, 10V
Pbfree Code :
yes
Product Status :
Obsolete
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
30V
Drain-source On Resistance-Max :
0.012Ohm
Drain Current-Max (Abs) (ID) :
150 A
Surface Mount :
No
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
9800pF @ 25V
ECCN Code :
EAR99
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
1500 mJ
Qualification Status :
Not Qualified
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
400A
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
150A
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Case Connection :
DRAIN
Terminal Position :
Single
Drain to Source Breakdown Voltage :
175V
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
TO-247 (IXTH)
Vgs(th) (Max) @ Id :
5V @ 1mA
FET Feature :
--
Number of Terminations :
3
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
830W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
830W
Datasheets
IXTH150N17T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH150N17T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXTH150N17T pinout, IXTH150N17T datasheet PDF, IXTH150N17T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH150N17T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH150N17T


N-Channel Tube 12m Ω @ 75A, 10V ±30V 9800pF @ 25V 155nC @ 10V 175V TO-247-3

IXTH150N17T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9800pF @ 25V.This device has a continuous drain current (ID) of [150A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=175V, the drain-source breakdown voltage is 175V.A device's drain current is its maximum continuous current, and this device's drain current is 150 A.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 175 V.In order to operate this transistor, a voltage of 175V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH150N17T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 175V voltage
based on its rated peak drain current 400A.
a 175V drain to source voltage (Vdss)


IXTH150N17T Applications


There are a lot of IXYS
IXTH150N17T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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