IXTH14N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

Min Operating Temperature :

-55 °C

Series :

MegaMOS™

Drain Current-Max (Abs) (ID) :

14 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

63 ns

Supplier Device Package :

TO-247 (IXTH)

Case Connection :

DRAIN

RoHS :

Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Max Operating Temperature :

150 °C

FET Type :

N-Channel

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

700m Ω @ 500mA, 10V

Surface Mount :

No

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

800V

Continuous Drain Current (ID) :

14A

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.7Ohm

Published :

2000

FET Feature :

--

Height :

21.46 mm

Reach Compliance Code :

Compliant

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

JEDEC-95 Code :

TO-247AD

Packaging :

Tube

Transistor Application :

SWITCHING

Mount :

Through Hole

Mounting Type :

Through Hole

Power Dissipation :

300W

Length :

16.26 mm

Drain to Source Breakdown Voltage :

800V

Product Status :

Obsolete

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Package Shape :

RECTANGULAR

Turn Off Time-Max (toff) :

150ns

Vgs (Max) :

±20V

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

300 W

Width :

5.3 mm

Power Dissipation-Max :

300W Tc

Brand :

IXYS

Drain to Source Resistance :

700 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Number of Terminals :

3

Product Category :

MOSFET

Base Product Number :

IXTH14

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

Power Dissipation Ambient-Max :

300 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Terminal Position :

Single

Power Dissipation-Max (Abs) :

300 W

Pulsed Drain Current-Max (IDM) :

56A

Input Capacitance :

4.5 nF

Power Dissipation (Max) :

300W (Tc)

Polarity/Channel Type :

N-Channel

Turn On Time-Max (ton) :

100ns

Pbfree Code :

yes

Element Configuration :

Single

Fall Time (Typ) :

32 ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

4.5V @ 250μA

DS Breakdown Voltage-Min :

800 V

Package :

Tube

Rise Time :

33ns

Rds On Max :

700 mΩ