IXTH14N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Turn On Time-Max (ton) :

100ns

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

800V

Package :

Tube

Power Dissipation Ambient-Max :

300 W

Surface Mount :

No

DS Breakdown Voltage-Min :

800 V

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

300W

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

300W (Tc)

Number of Channels :

1 Channel

Number of Terminals :

3

Supplier Device Package :

TO-247 (IXTH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Transistor Element Material :

SILICON

Series :

MegaMOS™

Terminal Position :

Single

Height :

21.46 mm

Drain-source On Resistance-Max :

0.7Ohm

JEDEC-95 Code :

TO-247AD

Continuous Drain Current (ID) :

14A

JESD-30 Code :

R-PSFM-T3

Turn Off Time-Max (toff) :

150ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

RoHS :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Minimum Operating Temperature :

- 55 C

Width :

5.3 mm

Reach Compliance Code :

Compliant

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

56A

Published :

2000

Max Operating Temperature :

150 °C

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-247-3

Packaging :

Tube

Transistor Type :

1 N-Channel

Length :

16.26 mm

Max Power Dissipation :

300 W

Drain Current-Max (Abs) (ID) :

14 A

Transistor Application :

SWITCHING

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Pin Count :

3

Base Product Number :

IXTH14

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55 °C

Power Dissipation-Max (Abs) :

300 W

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Rds On Max :

700 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

63 ns

Product Status :

Obsolete

Configuration :

Single

Number of Pins :

3

Product Type :

MOSFET

Brand :

IXYS

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Rise Time :

33ns

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

700m Ω @ 500mA, 10V

Drain to Source Resistance :

700 mΩ

Vgs (Max) :

±20V

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

32 ns

Input Capacitance :

4.5 nF