IXTH14N80
- Mfr.Part #
- IXTH14N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO247
- Stock
- 49,731
- In Stock :
- 49,731
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 300W Tc
- Channel Mode :
- Enhancement
- Published :
- 2000
- Drain to Source Voltage (Vdss) :
- 800V
- Package / Case :
- TO-247-3
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Power Dissipation-Max (Abs) :
- 300 W
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 32 ns
- Rise Time :
- 33ns
- Mount :
- Through Hole
- Supplier Device Package :
- TO-247 (IXTH)
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Max Power Dissipation :
- 300 W
- Continuous Drain Current (ID) :
- 14A
- Height :
- 21.46 mm
- Packaging :
- Tube
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Power Dissipation :
- 300W
- Min Operating Temperature :
- -55 °C
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 150ns
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.3 mm
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 14 A
- Terminal Position :
- Single
- Mounting Style :
- Through Hole
- Turn On Time-Max (ton) :
- 100ns
- Power Dissipation Ambient-Max :
- 300 W
- Drain to Source Resistance :
- 700 mΩ
- Max Operating Temperature :
- 150 °C
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.7Ohm
- Element Configuration :
- Single
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- RoHS :
- Compliant
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 56A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 16.26 mm
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 800 V
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Obsolete
- Series :
- MegaMOS™
- Vgs (Max) :
- ±20V
- Rds On Max :
- 700 mΩ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- JEDEC-95 Code :
- TO-247AD
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXTH14
- Turn-Off Delay Time :
- 63 ns
- Input Capacitance :
- 4.5 nF
- Datasheets
- IXTH14N80
IXTH14N80 Documents
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N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-247-3
IXTH14N80 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 14 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 63 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 56A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 700 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH14N80 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 56A.
single MOSFETs transistor is 700 mΩ
a 800V drain to source voltage (Vdss)
IXTH14N80 Applications
There are a lot of IXYS
IXTH14N80 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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