IXTH14N100
- Mfr.Part #
- IXTH14N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 14A TO247
- Stock
- 29,928
- In Stock :
- 29,928
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Width :
- 5.3 mm
- RoHS :
- Details
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 56A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 360W
- Transistor Element Material :
- SILICON
- Resistance :
- 820MOhm
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 14 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 16.26 mm
- Published :
- 2000
- Reach Compliance Code :
- Compliant
- Series :
- MegaMOS™
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5650pF @ 25V
- Base Product Number :
- IXTH14
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.82 Ω
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 1000V
- Height :
- 21.46 mm
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Turn-Off Delay Time :
- 80 ns
- Nominal Vgs :
- 4.5 V
- Rds On (Max) @ Id, Vgs :
- 820m Ω @ 500mA, 10V
- Continuous Drain Current (ID) :
- 14A
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation (Max) :
- 360W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 1kV
- Fall Time (Typ) :
- 36 ns
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Rise Time :
- 21ns
- Channel Mode :
- Enhancement
- Dual Supply Voltage :
- 1kV
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- HTS Code :
- 8541.29.00.95
- Threshold Voltage :
- 4.5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 360W Tc
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation Ambient-Max :
- 360 W
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Lead Free :
- Lead Free
- Datasheets
- IXTH14N100
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N-Channel Tube 820m Ω @ 500mA, 10V ±20V 5650pF @ 25V 195nC @ 10V 1000V TO-247-3
IXTH14N100 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5650pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [14 A] according to its drain current.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4.5V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH14N100 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
a threshold voltage of 4.5V
a 1000V drain to source voltage (Vdss)
IXTH14N100 Applications
There are a lot of IXYS
IXTH14N100 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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