IXTH14N100

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Mfr.Part #
IXTH14N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 14A TO247
Stock
29,928
In Stock :
29,928

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Width :
5.3 mm
RoHS :
Details
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
56A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
360W
Transistor Element Material :
SILICON
Resistance :
820MOhm
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
14 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
16.26 mm
Published :
2000
Reach Compliance Code :
Compliant
Series :
MegaMOS™
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5650pF @ 25V
Base Product Number :
IXTH14
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.82 Ω
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
1000V
Height :
21.46 mm
Transistor Type :
1 N-Channel
Packaging :
Tube
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Pin Count :
3
Turn-Off Delay Time :
80 ns
Nominal Vgs :
4.5 V
Rds On (Max) @ Id, Vgs :
820m Ω @ 500mA, 10V
Continuous Drain Current (ID) :
14A
Pbfree Code :
yes
DS Breakdown Voltage-Min :
1000 V
Power Dissipation-Max (Abs) :
300 W
Power Dissipation (Max) :
360W (Tc)
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Package :
Tube
Drain to Source Breakdown Voltage :
1kV
Fall Time (Typ) :
36 ns
FET Feature :
--
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Vgs (Max) :
±20V
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Rise Time :
21ns
Channel Mode :
Enhancement
Dual Supply Voltage :
1kV
FET Type :
N-Channel
Product Type :
MOSFET
Number of Elements :
1
Supplier Device Package :
TO-247 (IXTH)
Number of Terminations :
3
Number of Pins :
3
Mounting Style :
Through Hole
Factory Lead Time :
30 Weeks
REACH SVHC :
No SVHC
Surface Mount :
No
HTS Code :
8541.29.00.95
Threshold Voltage :
4.5V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
360W Tc
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Element Configuration :
Single
Manufacturer :
IXYS
JEDEC-95 Code :
TO-247AD
Operating Temperature :
-55°C~150°C TJ
Power Dissipation Ambient-Max :
360 W
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Lead Free :
Lead Free
Datasheets
IXTH14N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH14N100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXTH14N100 pinout, IXTH14N100 datasheet PDF, IXTH14N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH14N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH14N100


N-Channel Tube 820m Ω @ 500mA, 10V ±20V 5650pF @ 25V 195nC @ 10V 1000V TO-247-3

IXTH14N100 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5650pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [14 A] according to its drain current.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4.5V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH14N100 Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
a threshold voltage of 4.5V
a 1000V drain to source voltage (Vdss)


IXTH14N100 Applications


There are a lot of IXYS
IXTH14N100 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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