IXTH13N80
- Mfr.Part #
- IXTH13N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO247
- Stock
- 177
- In Stock :
- 177
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 300 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247 (IXTH)
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 1996
- Power Dissipation :
- 300W
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Power Dissipation-Max :
- 300W Tc
- Number of Channels :
- 1 Channel
- Power Dissipation Ambient-Max :
- 300 W
- Package :
- Tube
- Series :
- MegaMOS™
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Base Product Number :
- IXTH13
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Turn-Off Delay Time :
- 63 ns
- Drain Current-Max (Abs) (ID) :
- 13 A
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Width :
- 5.3 mm
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 800 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Height :
- 21.46 mm
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Style :
- Through Hole
- Length :
- 16.26 mm
- Pulsed Drain Current-Max (IDM) :
- 52A
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.8Ohm
- Continuous Drain Current (ID) :
- 13A
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 800V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Configuration :
- Single
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-247AD
- Fall Time (Typ) :
- 32 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- Rise Time :
- 33ns
- Manufacturer :
- IXYS
- Datasheets
- IXTH13N80
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N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-247-3
IXTH13N80 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 13 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 63 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 52A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH13N80 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)
IXTH13N80 Applications
There are a lot of IXYS
IXTH13N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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