IXTH13N80

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Mfr.Part #
IXTH13N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 13A TO247
Stock
177
In Stock :
177

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Turn-Off Delay Time :
63 ns
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Terminal Form :
THROUGH-HOLE
Mounting Style :
Through Hole
Power Dissipation Ambient-Max :
300 W
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Series :
MegaMOS™
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
13 A
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
800V
DS Breakdown Voltage-Min :
800 V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Height :
21.46 mm
Case Connection :
DRAIN
Element Configuration :
Single
Configuration :
Single
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Package :
Tube
Power Dissipation (Max) :
300W (Tc)
Transistor Type :
1 N-Channel
Number of Terminals :
3
Channel Mode :
Enhancement
Base Product Number :
IXTH13
Continuous Drain Current (ID) :
13A
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-247AD
Width :
5.3 mm
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
800V
Power Dissipation-Max (Abs) :
300 W
Power Dissipation-Max :
300W Tc
Power Dissipation :
300W
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-247-3
Maximum Operating Temperature :
+ 150 C
Rise Time :
33ns
Product Type :
MOSFET
Number of Terminations :
3
RoHS :
Details
Rds On (Max) @ Id, Vgs :
800m Ω @ 500mA, 10V
Pulsed Drain Current-Max (IDM) :
52A
Fall Time (Typ) :
32 ns
Drain-source On Resistance-Max :
0.8Ohm
Supplier Device Package :
TO-247 (IXTH)
Published :
1996
Qualification Status :
Not Qualified
Mount :
Through Hole
Number of Channels :
1 Channel
Packaging :
Tube
Product Status :
Active
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Length :
16.26 mm
Datasheets
IXTH13N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH13N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, IXTH13N80 pinout, IXTH13N80 datasheet PDF, IXTH13N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH13N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH13N80


N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-247-3

IXTH13N80 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 13 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 63 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 52A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH13N80 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)


IXTH13N80 Applications


There are a lot of IXYS
IXTH13N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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