IXTH13N80

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Mfr.Part #
IXTH13N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 13A TO247
Stock
177
In Stock :
177

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
21.46 mm
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max (Abs) :
300 W
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Turn-Off Delay Time :
63 ns
JEDEC-95 Code :
TO-247AD
Brand :
IXYS
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
52A
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
800V
Rds On (Max) @ Id, Vgs :
800m Ω @ 500mA, 10V
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Case Connection :
DRAIN
Fall Time (Typ) :
32 ns
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
13 A
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
5.3 mm
Number of Channels :
1 Channel
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
13A
Configuration :
Single
Length :
16.26 mm
Power Dissipation (Max) :
300W (Tc)
Package Shape :
RECTANGULAR
Product Status :
Active
DS Breakdown Voltage-Min :
800 V
Packaging :
Tube
Power Dissipation Ambient-Max :
300 W
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Number of Terminations :
3
Package :
Tube
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Power Dissipation-Max :
300W Tc
Drain to Source Voltage (Vdss) :
800V
Power Dissipation :
300W
Vgs (Max) :
±20V
Number of Elements :
1
Product Type :
MOSFET
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Series :
MegaMOS™
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Supplier Device Package :
TO-247 (IXTH)
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Minimum Operating Temperature :
- 55 C
Published :
1996
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
Through Hole
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.8Ohm
Rise Time :
33ns
Element Configuration :
Single
Base Product Number :
IXTH13
Qualification Status :
Not Qualified
FET Feature :
--
Datasheets
IXTH13N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH13N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, IXTH13N80 pinout, IXTH13N80 datasheet PDF, IXTH13N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH13N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH13N80


N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-247-3

IXTH13N80 Overview


The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 13 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 63 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 52A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH13N80 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)


IXTH13N80 Applications


There are a lot of IXYS
IXTH13N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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