IXTH13N80
- Mfr.Part #
- IXTH13N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO247
- Stock
- 177
- In Stock :
- 177
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Turn-Off Delay Time :
- 63 ns
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- Power Dissipation Ambient-Max :
- 300 W
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Series :
- MegaMOS™
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 13 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 800V
- DS Breakdown Voltage-Min :
- 800 V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Height :
- 21.46 mm
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTH13
- Continuous Drain Current (ID) :
- 13A
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-247AD
- Width :
- 5.3 mm
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation :
- 300W
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-247-3
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 33ns
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 500mA, 10V
- Pulsed Drain Current-Max (IDM) :
- 52A
- Fall Time (Typ) :
- 32 ns
- Drain-source On Resistance-Max :
- 0.8Ohm
- Supplier Device Package :
- TO-247 (IXTH)
- Published :
- 1996
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Length :
- 16.26 mm
- Datasheets
- IXTH13N80
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N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-247-3
IXTH13N80 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 13 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 63 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 52A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH13N80 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)
IXTH13N80 Applications
There are a lot of IXYS
IXTH13N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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