IXTH13N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Rise Time :

21ns

Factory Lead Time :

8 Weeks

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

360W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pin Count :

3

Terminal Position :

Single

Power Dissipation (Max) :

360W (Tc)

Element Configuration :

Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Base Product Number :

IXTH13

Drain to Source Breakdown Voltage :

1.1kV

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

52A

Vgs (Max) :

±20V

Product Status :

Obsolete

JEDEC-95 Code :

TO-247AD

Turn-Off Delay Time :

80 ns

FET Feature :

--

Drain to Source Voltage (Vdss) :

1100V

Current Rating :

13A

DS Breakdown Voltage-Min :

1100 V

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

5650pF @ 25V

Package Shape :

RECTANGULAR

Voltage - Rated DC :

1.1kV

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Packaging :

Tube

Manufacturer :

IXYS Corporation

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Package :

Tube

Continuous Drain Current (ID) :

13A

Power Dissipation :

360W

Series :

MegaMOS™

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Qualification Status :

Not Qualified

Power Dissipation Ambient-Max :

360 W

Fall Time (Typ) :

36 ns

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.92 Ω

Supplier Device Package :

TO-247 (IXTH)

Number of Terminals :

3

Pbfree Code :

yes

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

13 A

Power Dissipation-Max (Abs) :

360 W

Rds On (Max) @ Id, Vgs :

920m Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

Not Applicable

Resistance :

920mOhm