IXTH130N20T
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- Mfr.Part #
- IXTH130N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 130A TO247
- Stock
- 10,320
- In Stock ：
- 10,320
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchHV™
- Supplier Device Package :
- TO-247 (IXTH)
- Base Product Number :
- IXTH130
- Power Dissipation (Max) :
- 830W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 320A
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 200V
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 130A
- Product Type :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 500mA, 10V
- Published :
- 2007
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Number of Elements :
- 1
- Rise Time :
- 18 ns
- Product Status :
- Active
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Power Dissipation-Max :
- 830W Tc
- Drain-source On Resistance-Max :
- 0.016Ohm
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 8800pF @ 25V
- Brand :
- IXYS
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Subcategory :
- MOSFETs
- Mount :
- Through Hole
- Datasheets
- IXTH130N20T
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N-Channel Tube 16m Ω @ 500mA, 10V ±20V 8800pF @ 25V 150nC @ 10V 200V TO-247-3
IXTH130N20T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH130N20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 320A.
a 200V drain to source voltage (Vdss)
IXTH130N20T Applications
There are a lot of IXYS
IXTH130N20T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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