IXTH130N10T
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- Mfr.Part #
- IXTH130N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO247
- Stock
- 99,113
- In Stock ：
- 99,113
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation (Max) :
- 360W (Tc)
- Vgs (Max) :
- ±20V
- Height :
- 21.46 mm
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 360W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Published :
- 2008
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Length :
- 16.26 mm
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Power Dissipation :
- 360W
- Tradename :
- HiPerFET
- Base Product Number :
- IXTH130
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Minimum Operating Temperature :
- - 55 C
- Series :
- TrenchMV™
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- JESD-609 Code :
- e1
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Turn-Off Delay Time :
- 44 ns
- Number of Terminations :
- 3
- Configuration :
- Single
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 25A, 10V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 130A
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-247AD
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Package :
- Tube
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 104nC @ 10V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Drain to Source Voltage (Vdss) :
- 100V
- Rise Time :
- 47ns
- Fall Time (Typ) :
- 28 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5080pF @ 25V
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Supplier Device Package :
- TO-247 (IXTH)
- Maximum Operating Temperature :
- + 175 C
- Case Connection :
- DRAIN
- Width :
- 5.3 mm
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Datasheets
- IXTH130N10T
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N-Channel Tube 9.1m Ω @ 25A, 10V ±20V 5080pF @ 25V 104nC @ 10V 100V TO-247-3
IXTH130N10T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5080pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 130A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [44 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH130N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXTH130N10T Applications
There are a lot of IXYS
IXTH130N10T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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