IXTH12N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Vgs(th) (Max) @ Id :

4.5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

Width :

5.3 mm

DS Breakdown Voltage-Min :

900 V

Power Dissipation :

300W

Base Product Number :

IXTH12

Pin Count :

3

Product Type :

MOSFET

Length :

16.26 mm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain-source On Resistance-Max :

0.9Ohm

Product Category :

MOSFET

Package :

Tube

JEDEC-95 Code :

TO-247AD

Element Configuration :

Single

Series :

MegaMOS™

Mount :

Through Hole

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

12A

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-247 (IXTH)

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

FET Feature :

--

Lead Free :

Lead Free

Configuration :

Single

Manufacturer :

IXYS

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

900V

Gate to Source Voltage (Vgs) :

20V

Height :

21.46 mm

Packaging :

Tube

Transistor Polarity :

N-Channel

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

63 ns

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

900V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

48A

Published :

2000

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Elements :

1

Mounting Style :

Through Hole

Number of Terminals :

3

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

33ns

Power Dissipation Ambient-Max :

300 W

Transistor Element Material :

SILICON

RoHS :

Details

Fall Time (Typ) :

32 ns

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

12 A

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

300 W

Package / Case :

TO-247-3