IXTH12N100Q

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Mfr.Part #
IXTH12N100Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO247
Stock
40,389
In Stock :
40,389

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
1000V
Vgs(th) (Max) @ Id :
--
Packaging :
Tube
Package :
Tube
Mount :
Through Hole
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Base Product Number :
IXTH12
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Product Status :
Active
Power Dissipation :
300W
Max Power Dissipation :
300W
Series :
--
Rds On (Max) @ Id, Vgs :
--
Drain to Source Breakdown Voltage :
1kV
Published :
2010
Drain to Source Resistance :
1.05Ohm
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
12A
Operating Temperature :
--
Supplier Device Package :
TO-247 (IXTH)
Element Configuration :
Single
Power Dissipation (Max) :
--
Datasheets
IXTH12N100Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH12N100Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:--, IXTH12N100Q pinout, IXTH12N100Q datasheet PDF, IXTH12N100Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH12N100Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH12N100Q


N-Channel Tube -- 1000V TO-247-3

IXTH12N100Q Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.05Ohm.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.

IXTH12N100Q Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
single MOSFETs transistor is 1.05Ohm
a 1000V drain to source voltage (Vdss)


IXTH12N100Q Applications


There are a lot of IXYS
IXTH12N100Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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