IXTH12N100L

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Mfr.Part #
IXTH12N100L
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO247
Stock
2,706
In Stock :
2,706

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max. operating temperature :
+150°C
Supplier Device Package :
TO-247 (IXTH)
Transistor Polarity :
N-Channel
Package :
Tube
Channel Mode :
Enhancement
Package / Case :
TO-247-3
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Channel Type :
N
Product Category :
MOSFET
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1500 mJ
Rise Time :
55ns
Mount :
Through Hole
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
110 ns
Series :
--
Additional Feature :
AVALANCHE RATED
Length :
16.26mm
Turn On Delay Time :
30 ns
Current - Continuous Drain (Id) @ 25°C :
12A Tc
RoHS :
Details
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
Power (max) P(TOT) :
400W
Reach Compliance Code :
Unknown
Fall Time (Typ) :
65 ns
Power Dissipation (Max) :
400W (Tc)
Package Type :
TO-247
Qualification Status :
Not Qualified
Number of Pins :
3
Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 20V
Number of Elements :
1
Number of Terminations :
3
Drain to Source Breakdown Voltage :
1kV
Drain to Source Voltage (Vdss) :
1000V
Transistor Element Material :
SILICON
FET Type :
N-Channel
FET Feature :
--
Gate to Source Voltage (Vgs) :
30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Enclosure :
TO 247AD
JEDEC-95 Code :
TO-247AD
Channels :
1
Number of Elements per Chip :
1
Continuous Drain Current (ID) :
12A
Pulsed Drain Current-Max (IDM) :
25A
Power Dissipation :
400W
Manufacturer :
IXYS
Vgs (Max) :
±30V
Width :
5.3mm
Power Dissipation-Max :
400W Tc
Published :
2007
Manuf. code :
IXY
Brand :
IXYS
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
-55 °C
Drive Voltage (Max Rds On,Min Rds On) :
20V
Mounting Style :
Through Hole
Pbfree Code :
yes
Transistor Application :
SWITCHING
Element Configuration :
Single
Height :
21.46mm
Base Product Number :
IXTH12
Rds On (Max) @ Id, Vgs :
1.3 Ω @ 500mA, 20V
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Maximum Operating Temperature :
+150 °C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Content :
1pc(s)
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Datasheets
IXTH12N100L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH12N100L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Type:N-Channel, Number of Terminations:3, Number of Channels:1 Channel, IXTH12N100L pinout, IXTH12N100L datasheet PDF, IXTH12N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH12N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH12N100L


N-Channel Tube 1.3 Ω @ 500mA, 20V ±30V 2500pF @ 25V 155nC @ 20V 1000V TO-247-3

IXTH12N100L Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (20V).

IXTH12N100L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 25A.
a 1000V drain to source voltage (Vdss)


IXTH12N100L Applications


There are a lot of IXYS
IXTH12N100L applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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