IXTH12N100L
- Mfr.Part #
- IXTH12N100L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12A TO247
- Stock
- 2,706
- In Stock :
- 2,706
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max. operating temperature :
- +150°C
- Supplier Device Package :
- TO-247 (IXTH)
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Channel Mode :
- Enhancement
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Channel Type :
- N
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rise Time :
- 55ns
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 110 ns
- Series :
- --
- Additional Feature :
- AVALANCHE RATED
- Length :
- 16.26mm
- Turn On Delay Time :
- 30 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power (max) P(TOT) :
- 400W
- Reach Compliance Code :
- Unknown
- Fall Time (Typ) :
- 65 ns
- Power Dissipation (Max) :
- 400W (Tc)
- Package Type :
- TO-247
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 20V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 1kV
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Enclosure :
- TO 247AD
- JEDEC-95 Code :
- TO-247AD
- Channels :
- 1
- Number of Elements per Chip :
- 1
- Continuous Drain Current (ID) :
- 12A
- Pulsed Drain Current-Max (IDM) :
- 25A
- Power Dissipation :
- 400W
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±30V
- Width :
- 5.3mm
- Power Dissipation-Max :
- 400W Tc
- Published :
- 2007
- Manuf. code :
- IXY
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- -55 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Height :
- 21.46mm
- Base Product Number :
- IXTH12
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 500mA, 20V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Maximum Operating Temperature :
- +150 °C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Content :
- 1pc(s)
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Datasheets
- IXTH12N100L
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N-Channel Tube 1.3 Ω @ 500mA, 20V ±30V 2500pF @ 25V 155nC @ 20V 1000V TO-247-3
IXTH12N100L Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (20V).
IXTH12N100L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 25A.
a 1000V drain to source voltage (Vdss)
IXTH12N100L Applications
There are a lot of IXYS
IXTH12N100L applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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