IXTH12N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

Package / Case :

TO-247-3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

33ns

Product Status :

Active

Drain to Source Breakdown Voltage :

1kV

Series :

MegaMOS™

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

300W (Tc)

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Power Dissipation :

300W

Resistance :

1.05Ohm

Drain Current-Max (Abs) (ID) :

12 A

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1000 V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

1000V

ECCN Code :

EAR99

Published :

2000

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

1.05 Ω

Number of Terminations :

3

FET Type :

N-Channel

Power Dissipation Ambient-Max :

300 W

Supplier Device Package :

TO-247 (IXTH)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Pins :

3

Base Product Number :

IXTH12

Continuous Drain Current (ID) :

12A

Number of Terminals :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Qualification Status :

Not Qualified

Manufacturer :

IXYS Corporation

Pulsed Drain Current-Max (IDM) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Power Dissipation-Max (Abs) :

300 W

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

62 ns

Pbfree Code :

yes

Packaging :

Tube

Number of Elements :

1

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Fall Time (Typ) :

32 ns