IXTA96P085T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchP™

RoHS :

Details

Qualification :

-

Continuous Drain Current Id :

96A

Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83 mm

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Package :

Tube

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Power Dissipation-Max :

298W Tc

Transistor Element Material :

SILICON

Fall Time (Typ) :

22 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

15V

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

298 W

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Base Product Number :

IXTA96

Rise Time :

34ns

Rds On (Max) @ Id, Vgs :

13m Ω @ 48A, 10V

Product Type :

MOSFET

Pbfree Code :

yes

Channel Type :

P Channel

Terminal Position :

Single

Turn-Off Delay Time :

45 ns

Case Connection :

DRAIN

Brand :

IXYS

Packaging :

Tube

Vgs (Max) :

±15V

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Number of Terminals :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-263AB

Minimum Operating Temperature :

- 55 C

Width :

9.65 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Length :

10.41 mm

Continuous Drain Current (ID) :

96A

Transistor Type :

1 P-Channel

Supplier Device Package :

TO-263 (IXTA)

Product Category :

MOSFET

Transistor Application :

SWITCHING

Published :

2010

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Transistor Polarity :

P-Channel

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

1000 mJ

Pulsed Drain Current-Max (IDM) :

300A

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

13100pF @ 25V

Number of Terminations :

2

Power Dissipation (Max) :

298W (Tc)

Drain to Source Breakdown Voltage :

-85V

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

JESD-609 Code :

e3

FET Feature :

--

DS Breakdown Voltage-Min :

85 V

Power Dissipation :

298W

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

96 A

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

28 Weeks

Drain-source On Resistance-Max :

0.013 Ω

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

85V

Mount :

Surface Mount