IXTA96P085T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Number of Terminals :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

15V

Base Product Number :

IXTA96

Published :

2010

Power Dissipation (Max) :

298W (Tc)

Polarity/Channel Type :

P-Channel

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Power Dissipation :

298W

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXTA)

Number of Channels :

1 Channel

FET Feature :

--

Package :

Tube

Mounting Type :

Surface Mount

Rise Time :

34ns

Brand :

IXYS

Element Configuration :

Single

FET Type :

P-Channel

Transistor Application :

SWITCHING

Fall Time (Typ) :

22 ns

Turn-Off Delay Time :

45 ns

Terminal Position :

Single

Transistor Type :

1 P-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

298W Tc

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Series :

TrenchP™

Power Dissipation-Max (Abs) :

298 W

Reach Compliance Code :

not_compliant

Configuration :

Single

Continuous Drain Current (ID) :

96A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

300A

DS Breakdown Voltage-Min :

85 V

Rds On (Max) @ Id, Vgs :

13m Ω @ 48A, 10V

Qualification Status :

Not Qualified

Transistor Polarity :

P-Channel

Mounting Style :

SMD/SMT

Pin Count :

4

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Length :

10.41 mm

Qualification :

-

Factory Lead Time :

28 Weeks

Vgs (Max) :

±15V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Drain to Source Voltage (Vdss) :

85V

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

13100pF @ 25V

JEDEC-95 Code :

TO-263AB

Height :

4.83 mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

96 A

Maximum Operating Temperature :

+ 150 C

Mount :

Surface Mount

Product Category :

MOSFET

ECCN Code :

EAR99

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-85V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.013 Ω

Number of Elements :

1

Number of Terminations :

2

Product Type :

MOSFET

Continuous Drain Current Id :

96A

Surface Mount :

yes

Packaging :

Tube

Avalanche Energy Rating (Eas) :

1000 mJ

Channel Type :

P Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)