IXTA08N100D2HV
- Mfr.Part #
- IXTA08N100D2HV
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO263HV
- Stock
- 31,549
- In Stock :
- 31,549
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Power Dissipation (Max) :
- 60W (Tc)
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- TO-263HV
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2008
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tj
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Rise Time :
- 57 ns
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Terminal Position :
- Single
- Factory Lead Time :
- 24 Weeks
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 25μA
- Number of Channels :
- 1 Channel
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 1000V
- Brand :
- IXYS
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Style :
- SMD/SMT
- RoHS :
- Details
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXTA08
- FET Type :
- N-Channel
- Series :
- --
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max :
- 60W Tc
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- FET Feature :
- Depletion Mode
- Channel Mode :
- Depletion
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IXTA08N100D2HV

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA08N100D2HV Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 325pF @ 25V.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).
IXTA08N100D2HV Features
a 1000V drain to source voltage (Vdss)
IXTA08N100D2HV Applications
There are a lot of IXYS
IXTA08N100D2HV applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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