IXTA08N100D2HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 25μA

FET Type :

N-Channel

Number of Channels :

1 Channel

Manufacturer :

IXYS

Series :

--

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Pin Count :

4

RoHS :

Details

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Subcategory :

MOSFETs

Product Category :

MOSFET

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Mounting Style :

SMD/SMT

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Package :

Tube

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

60W (Tc)

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

14.6nC @ 5V

Base Product Number :

IXTA08

Supplier Device Package :

TO-263HV

Rds On (Max) @ Id, Vgs :

21 Ω @ 400mA, 0V

Terminal Position :

Single

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Rise Time :

57 ns

Channel Mode :

Depletion

Current - Continuous Drain (Id) @ 25°C :

800mA Tj

Brand :

IXYS

FET Feature :

Depletion Mode

Surface Mount :

yes

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

1000V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

0V

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

24 Weeks

Power Dissipation-Max :

60W Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing