IXTA06N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

42W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.5 mm

Case Connection :

DRAIN

Lead Free :

Lead Free

Power Dissipation :

42W

Rise Time :

24ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Packaging :

Tube

Avalanche Energy Rating (Eas) :

50 mJ

Qualification Status :

Not Qualified

Configuration :

Single

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.6A

Element Configuration :

Single

Reach Compliance Code :

Unknown

Manufacturer :

IXYS

Package :

Tube

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Number of Terminations :

2

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Pin Count :

4

Series :

PolarVHV™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Length :

9.9 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

600mA

Product Category :

MOSFET

JEDEC-95 Code :

TO-263AB

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

FET Feature :

--

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Type :

1 N-Channel

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

50 ns

Pulsed Drain Current-Max (IDM) :

1.2A

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

42 W

Pbfree Code :

yes

Product Status :

Active

Power Dissipation (Max) :

42W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Package Shape :

RECTANGULAR

Base Product Number :

IXTA06

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

32 Ω @ 300mA, 10V

Terminal Position :

Single

Published :

2007

Number of Terminals :

2

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

1200 V

Fall Time (Typ) :

27 ns

Channel Mode :

Enhancement

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

1200V

Drain-source On Resistance-Max :

34Ohm

Supplier Device Package :

TO-263 (IXTA)

Brand :

IXYS

JESD-30 Code :

R-PSSO-G2

Width :

9.2 mm

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Number of Elements :

1

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

1.2kV

Transistor Application :

SWITCHING

FET Type :

N-Channel

Mounting Style :

SMD/SMT