IXTA06N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

1200 V

Rds On (Max) @ Id, Vgs :

32 Ω @ 300mA, 10V

Qualification Status :

Not Qualified

Base Product Number :

IXTA06

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Factory Lead Time :

17 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Product Category :

MOSFET

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

27 ns

Power Dissipation-Max :

42W Tc

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Brand :

IXYS

Length :

9.9 mm

FET Type :

N-Channel

Height :

4.5 mm

Width :

9.2 mm

Package Shape :

RECTANGULAR

Series :

PolarVHV™

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Packaging :

Tube

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

1.2A

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

JEDEC-95 Code :

TO-263AB

Continuous Drain Current (ID) :

600mA

Drain-source On Resistance-Max :

34Ohm

Surface Mount :

yes

Power Dissipation-Max (Abs) :

42 W

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Power Dissipation (Max) :

42W (Tc)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Channels :

1 Channel

Number of Elements :

1

Mounting Style :

SMD/SMT

RoHS :

Details

Pin Count :

4

Case Connection :

DRAIN

Rise Time :

24ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

50 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

50 mJ

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Manufacturer :

IXYS

JESD-609 Code :

e3

Package :

Tube

Drain Current-Max (Abs) (ID) :

0.6A

Published :

2007

Transistor Polarity :

N-Channel

Configuration :

Single

Drain to Source Voltage (Vdss) :

1200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-263 (IXTA)

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Power Dissipation :

42W

Product Type :

MOSFET

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

1.2kV