IXTA08N120P

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Mfr.Part #
IXTA08N120P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO263
Stock
11,286
In Stock :
11,286

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
9.65 mm
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
1.8 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
24 ns
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Element Configuration :
Single
Input Capacitance :
333 pF
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Power Dissipation-Max :
50W Tc
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
25 Ω
ECCN Code :
EAR99
JESD-30 Code :
R-PSSO-G2
Packaging :
Tube
Mounting Type :
Surface Mount
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
50W (Tc)
JESD-609 Code :
e3
Pin Count :
4
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Tradename :
Polar
Mounting Style :
SMD/SMT
Width :
10.41 mm
Max Operating Temperature :
150 °C
DS Breakdown Voltage-Min :
1200 V
Continuous Drain Current (ID) :
800mA
Terminal Position :
Single
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Drain to Source Voltage (Vdss) :
1200V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Turn-Off Delay Time :
55 ns
Factory Lead Time :
28 Weeks
Transistor Type :
1 N-Channel
RoHS :
Details
Rds On Max :
25 Ω
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
yes
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
50 W
Series :
Polar™
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
JEDEC-95 Code :
TO-263AB
Type :
Polar Power MOSFET
Number of Terminations :
2
Product Type :
MOSFET
Pbfree Code :
yes
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Polarity/Channel Type :
N-Channel
FET Feature :
--
Base Product Number :
IXTA08
Drain to Source Breakdown Voltage :
1.2kV
Rise Time :
26ns
Manufacturer :
IXYS
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Drain to Source Resistance :
25 Ω
Power Dissipation :
50W
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Height :
4.83 mm
Configuration :
Single
Max Power Dissipation :
50 W
Drain Current-Max (Abs) (ID) :
0.8A
Number of Terminals :
2
Avalanche Energy Rating (Eas) :
80 mJ
Channel Mode :
Enhancement
FET Type :
N-Channel
Product Status :
Active
Number of Elements :
1
Min Operating Temperature :
-55 °C
Datasheets
IXTA08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:Polar Power MOSFET, Number of Terminations:2, IXTA08N120P pinout, IXTA08N120P datasheet PDF, IXTA08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA08N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 333pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 0.8A.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 1.8 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 25 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8 A.
single MOSFETs transistor is 25 Ω
a 1200V drain to source voltage (Vdss)


IXTA08N120P Applications


There are a lot of IXYS
IXTA08N120P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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