IXTA02N250HV

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Mfr.Part #
IXTA02N250HV
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 2500V 200MA TO263AB
Stock
2,703
In Stock :
2,703

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
450 Ω @ 50mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
116pF @ 25V
Published :
2013
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
FET Feature :
--
Factory Lead Time :
17 Weeks
Drain to Source Voltage (Vdss) :
2500V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Radiation Hardening :
No
Reach Compliance Code :
Unknown
Drain to Source Breakdown Voltage :
2.5kV
Rise Time :
19ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Package :
Tube
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Weight :
1.770002g
Lead Free :
Lead Free
Subcategory :
MOSFETs
Gate Charge (Qg) (Max) @ Vgs :
7.4nC @ 10V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Power Dissipation :
83W
Mounting Type :
Surface Mount
Pin Count :
3
Series :
--
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
0.6A
Base Product Number :
IXTA02
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
RoHS :
Details
Brand :
IXYS
Mounting Style :
SMD/SMT
Number of Channels :
1
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Turn-Off Delay Time :
32 ns
Product Status :
Active
Continuous Drain Current (ID) :
200mA
Product Type :
MOSFET
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Fall Time (Typ) :
33 ns
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
0.2A
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
83W (Tc)
Mount :
Surface Mount
Turn On Delay Time :
19 ns
Element Configuration :
Single
Supplier Device Package :
TO-263AB
Power Dissipation-Max :
83W Tc
Datasheets
IXTA02N250HV
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA02N250HV from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA02N250HV pinout, IXTA02N250HV datasheet PDF, IXTA02N250HV amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA02N250HV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA02N250HV


N-Channel Tube 450 Ω @ 50mA, 10V ±20V 116pF @ 25V 7.4nC @ 10V 2500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA02N250HV Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 116pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 2.5kV, and this device has a drainage-to-source breakdown voltage of 2.5kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Peak drain current is 0.6A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 2500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA02N250HV Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 2.5kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 0.6A.
a 2500V drain to source voltage (Vdss)


IXTA02N250HV Applications


There are a lot of IXYS
IXTA02N250HV applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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