IXTA02N450HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

113W

Number of Elements :

1

JESD-609 Code :

e3

Supplier Device Package :

TO-263 (IXTA)

Rds On Max :

750 Ω

FET Type :

N-Channel

Configuration :

Single

Surface Mount :

yes

Continuous Drain Current (ID) :

200mA

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Mount :

Surface Mount

Packaging :

Tube

Power Dissipation-Max :

113W Tc

Package :

Tube

Drain to Source Resistance :

750 Ω

Base Product Number :

IXTA02

Published :

2012

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Drain Current-Max (Abs) (ID) :

0.2A

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

6.5V @ 250μA

Drain to Source Breakdown Voltage :

4.5kV

Fall Time (Typ) :

143 ns

Manufacturer :

IXYS Corporation

Turn-Off Delay Time :

28 ns

Vgs (Max) :

±20V

Series :

--

Drain to Source Voltage (Vdss) :

4500V

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Power Dissipation (Max) :

113W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Max Power Dissipation :

113 W

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

RoHS :

Compliant

Operating Temperature :

-55°C~150°C TJ

Rise Time :

48ns

Input Capacitance :

256 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

750 Ω @ 10mA, 10V

Power Dissipation-Max (Abs) :

113 W

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Element Configuration :

Single

Product Status :

Obsolete