IXTA05N100HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pin Count :

4

Power Dissipation (Max) :

40W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

0.75A

Supplier Device Package :

TO-263

DS Breakdown Voltage-Min :

1000V

Number of Terminations :

2

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

Product Category :

MOSFET

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Elements :

1

Series :

--

Pulsed Drain Current-Max (IDM) :

3A

Power Dissipation-Max :

40W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Status :

Active

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Maximum Operating Temperature :

+ 150 C

Case Connection :

DRAIN

Product Type :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

750mA

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

100 mJ

Drain to Source Voltage (Vdss) :

1000V

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Base Product Number :

IXTA05

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Mounting Style :

SMD/SMT

Reach Compliance Code :

not_compliant

Package :

Tube

Mount :

Surface Mount

FET Feature :

--

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

Transistor Type :

1 N-Channel

Rise Time :

19 ns