IXTA05N100HV-TRL

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Packaging :

Reel

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

3A

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Power Dissipation (Max) :

40W (Tc)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Package :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-263AB

Base Product Number :

IXTA05

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Pin Count :

4

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

FET Feature :

-

Product Category :

MOSFET

Transistor Application :

SWITCHING

Factory Lead Time :

24 Weeks

Supplier Device Package :

TO-263HV

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

1000V

FET Type :

N-Channel

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

0.75A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

17 Ω

Power Dissipation-Max :

40W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

40 W

Surface Mount :

yes

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

SMD/SMT

Avalanche Energy Rating (Eas) :

100 mJ

Product Status :

Active

RoHS :

Details

Rise Time :

19 ns

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Brand :

IXYS

Number of Terminals :

2

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

-

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

1000V

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR