IXTA08N100P
- Mfr.Part #
- IXTA08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO263
- Stock
- 29,253
- In Stock :
- 29,253
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 28 Weeks
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 35 ns
- Packaging :
- Tube
- Surface Mount :
- yes
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 1000 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Supplier Device Package :
- TO-263 (IXTA)
- Terminal Position :
- Single
- Pin Count :
- 4
- Power Dissipation-Max :
- 42W Tc
- Fall Time (Typ) :
- 34 ns
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 1kV
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 42 W
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 20 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Published :
- 2009
- Base Product Number :
- IXTA08
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 800mA
- Terminal Finish :
- Matte Tin (Sn)
- Channel Mode :
- Enhancement
- Power Dissipation :
- 42W
- Rise Time :
- 37ns
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Mount :
- Surface Mount
- Configuration :
- Single
- Number of Elements :
- 1
- Product Status :
- Active
- Power Dissipation (Max) :
- 42W (Tc)
- Package :
- Tube
- Series :
- Polar™
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Width :
- 9.65 mm
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Length :
- 10.41 mm
- Number of Terminals :
- 2
- JEDEC-95 Code :
- TO-263AB
- Height :
- 4.83 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTA08N100P
IXTA08N100P Documents

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA08N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 240pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 800mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1.8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTA08N100P Applications
There are a lot of IXYS
IXTA08N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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