IXTA08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

34 ns

Series :

Polar™

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-263AB

Pin Count :

4

Package :

Tube

Transistor Element Material :

SILICON

Product Category :

MOSFET

Number of Channels :

1 Channel

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Height :

4.83 mm

Packaging :

Tube

Published :

2009

Pulsed Drain Current-Max (IDM) :

1.8A

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Power Dissipation-Max (Abs) :

42 W

Turn-Off Delay Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 50μA

Number of Terminals :

2

Transistor Application :

SWITCHING

Supplier Device Package :

TO-263 (IXTA)

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Continuous Drain Current (ID) :

800mA

Mounting Type :

Surface Mount

Factory Lead Time :

28 Weeks

FET Type :

N-Channel

Number of Terminations :

2

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Surface Mount :

yes

Brand :

IXYS

Base Product Number :

IXTA08

Drain Current-Max (Abs) (ID) :

0.8A

Power Dissipation-Max :

42W Tc

Length :

10.41 mm

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

20 Ω

Avalanche Energy Rating (Eas) :

80 mJ

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

1000 V

Configuration :

Single

Width :

9.65 mm

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Power Dissipation (Max) :

42W (Tc)

Drain to Source Breakdown Voltage :

1kV

Power Dissipation :

42W

Vgs (Max) :

±20V

Pbfree Code :

yes

Rise Time :

37ns

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Elements :

1