IXTA08N100P

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Mfr.Part #
IXTA08N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO263
Stock
29,253
In Stock :
29,253

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
Published :
2009
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Drain to Source Breakdown Voltage :
1kV
Number of Terminations :
2
Brand :
IXYS
FET Feature :
--
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
800mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Power Dissipation :
42W
Base Product Number :
IXTA08
Surface Mount :
yes
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Series :
Polar™
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
1.8A
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Terminal Position :
Single
Height :
4.83 mm
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 50μA
Avalanche Energy Rating (Eas) :
80 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Turn-Off Delay Time :
35 ns
Power Dissipation-Max (Abs) :
42 W
Packaging :
Tube
Rise Time :
37ns
Product Type :
MOSFET
Package :
Tube
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Fall Time (Typ) :
34 ns
Factory Lead Time :
28 Weeks
Length :
10.41 mm
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-263AB
Supplier Device Package :
TO-263 (IXTA)
Mount :
Surface Mount
Pbfree Code :
yes
DS Breakdown Voltage-Min :
1000 V
Power Dissipation-Max :
42W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
20 Ω
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Configuration :
Single
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Element Configuration :
Single
Number of Terminals :
2
Reach Compliance Code :
not_compliant
Width :
9.65 mm
Power Dissipation (Max) :
42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Drain to Source Voltage (Vdss) :
1000V
Mounting Style :
SMD/SMT
Product Category :
MOSFET
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
0.8A
Manufacturer :
IXYS
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTA08N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTA08N100P pinout, IXTA08N100P datasheet PDF, IXTA08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA08N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 240pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 800mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1.8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTA08N100P Applications


There are a lot of IXYS
IXTA08N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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