IXTA05N100

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Mfr.Part #
IXTA05N100
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 750MA TO263
Stock
29,896
In Stock :
29,896

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
17 Ω @ 375mA, 10V
Reach Compliance Code :
not_compliant
Configuration :
Single
Transistor Type :
1 N-Channel
Mounting Type :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
2
Drain-source On Resistance-Max :
17 Ω
Operating Mode :
ENHANCEMENT MODE
Length :
9.65 mm
Gate Charge (Qg) (Max) @ Vgs :
7.8nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
40 W
Transistor Element Material :
SILICON
Package :
Tube
Drain to Source Breakdown Voltage :
1kV
Vgs(th) (Max) @ Id :
4.5V @ 250μA
JEDEC-95 Code :
TO-263AA
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
Supplier Device Package :
TO-263 (IXTA)
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
FET Type :
N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lead Free :
Lead Free
Height :
4.83 mm
Factory Lead Time :
28 Weeks
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
3A
Turn-Off Delay Time :
40 ns
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
10.41 mm
Base Product Number :
IXTA05
Series :
--
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Rise Time :
19ns
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
JESD-609 Code :
e3
Power Dissipation (Max) :
40W (Tc)
Fall Time (Typ) :
28 ns
Type :
High Voltage Power MOSFET
Power Dissipation :
40W
Avalanche Energy Rating (Eas) :
100 mJ
Qualification Status :
Not Qualified
Resistance :
17mOhm
Mount :
Surface Mount
Published :
2008
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
40W Tc
Pin Count :
4
Drain to Source Voltage (Vdss) :
1000V
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
750mA Tc
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
0.75A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
1000 V
Mounting Style :
SMD/SMT
Manufacturer :
IXYS
Case Connection :
DRAIN
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Product Status :
Active
Brand :
IXYS
Packaging :
Tube
Terminal Form :
Gull wing
Transistor Polarity :
N-Channel
Number of Pins :
3
Continuous Drain Current (ID) :
750mA
JESD-30 Code :
R-PSSO-G2
Datasheets
IXTA05N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA05N100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Type:High Voltage Power MOSFET, Number of Pins:3, IXTA05N100 pinout, IXTA05N100 datasheet PDF, IXTA05N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA05N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA05N100


N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA05N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 0.75A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 3A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA05N100 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTA05N100 Applications


There are a lot of IXYS
IXTA05N100 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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