IXTA05N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

--

JEDEC-95 Code :

TO-263AA

Terminal Position :

Single

Number of Terminals :

2

Rise Time :

19ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

40W (Tc)

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

40 W

Drain to Source Breakdown Voltage :

1kV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

3A

Type :

High Voltage Power MOSFET

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

40 ns

Maximum Operating Temperature :

+ 150 C

Mount :

Surface Mount

Power Dissipation :

40W

Pin Count :

4

Element Configuration :

Single

Power Dissipation-Max :

40W Tc

Published :

2008

Mounting Style :

SMD/SMT

Width :

10.41 mm

Terminal Finish :

Matte Tin (Sn)

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Number of Pins :

3

JESD-609 Code :

e3

Base Product Number :

IXTA05

FET Type :

N-Channel

Fall Time (Typ) :

28 ns

Supplier Device Package :

TO-263 (IXTA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

100 mJ

Surface Mount :

yes

Reach Compliance Code :

not_compliant

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Transistor Polarity :

N-Channel

Brand :

IXYS

Number of Channels :

1 Channel

Packaging :

Tube

Pbfree Code :

yes

Manufacturer :

IXYS

Resistance :

17mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83 mm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Length :

9.65 mm

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

1000V

Number of Terminations :

2

Configuration :

Single

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

750mA

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.75A

DS Breakdown Voltage-Min :

1000 V

Drain-source On Resistance-Max :

17 Ω

Factory Lead Time :

28 Weeks