IXTA90N15T
- Mfr.Part #
- IXTA90N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 90A TO263
- Stock
- 16,890
- In Stock :
- 16,890
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.02Ohm
- Published :
- 2007
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 150 V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 45A, 10V
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 455W
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Drain to Source Breakdown Voltage :
- 150V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 19 ns
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 455W (Tc)
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 25V
- Number of Terminals :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 4
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 0.75 mJ
- Supplier Device Package :
- TO-263 (IXTA)
- JESD-609 Code :
- e3
- Base Product Number :
- IXTA90
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 150V
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Power Dissipation-Max :
- 455W Tc
- Continuous Drain Current (ID) :
- 90A
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- --
- Pulsed Drain Current-Max (IDM) :
- 250A
- Package :
- Tube
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 22ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 44 ns
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXTA90N15T
IXTA90N15T Documents

N-Channel Tube 20m Ω @ 45A, 10V ±30V 4100pF @ 25V 80nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA90N15T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 0.75 mJ.A device's maximum input capacitance is 4100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 250A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA90N15T Features
the avalanche energy rating (Eas) is 0.75 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXTA90N15T Applications
There are a lot of IXYS
IXTA90N15T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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