IXTA90N15T
- Mfr.Part #
- IXTA90N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 90A TO263
- Stock
- 16,890
- In Stock :
- 16,890
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 44 ns
- Continuous Drain Current (ID) :
- 90A
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 455W Tc
- Manufacturer :
- IXYS Corporation
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.02Ohm
- Published :
- 2007
- Pulsed Drain Current-Max (IDM) :
- 250A
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 45A, 10V
- Avalanche Energy Rating (Eas) :
- 0.75 mJ
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 150V
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Power Dissipation :
- 455W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 455W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Element Configuration :
- Single
- Fall Time (Typ) :
- 19 ns
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-263 (IXTA)
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Series :
- --
- Base Product Number :
- IXTA90
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- JEDEC-95 Code :
- TO-263AB
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Rise Time :
- 22ns
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 150V
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 150 V
- Vgs (Max) :
- ±30V
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 25V
- Datasheets
- IXTA90N15T
IXTA90N15T Documents

N-Channel Tube 20m Ω @ 45A, 10V ±30V 4100pF @ 25V 80nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA90N15T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 0.75 mJ.A device's maximum input capacitance is 4100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 250A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA90N15T Features
the avalanche energy rating (Eas) is 0.75 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXTA90N15T Applications
There are a lot of IXYS
IXTA90N15T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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