IXTA90N15T

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Mfr.Part #
IXTA90N15T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 150V 90A TO263
Stock
16,890
In Stock :
16,890

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
150V
Package :
Tube
Qualification Status :
Not Qualified
FET Feature :
--
Drain to Source Breakdown Voltage :
150V
JESD-30 Code :
R-PSSO-G2
Number of Terminals :
2
ECCN Code :
EAR99
Continuous Drain Current (ID) :
90A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Series :
--
Terminal Form :
Gull wing
Drain-source On Resistance-Max :
0.02Ohm
Power Dissipation (Max) :
455W (Tc)
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
not_compliant
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXTA90
Vgs (Max) :
±30V
Pulsed Drain Current-Max (IDM) :
250A
Number of Elements :
1
Rise Time :
22ns
Fall Time (Typ) :
19 ns
Product Status :
Active
DS Breakdown Voltage-Min :
150 V
Power Dissipation-Max :
455W Tc
RoHS Status :
ROHS3 Compliant
Power Dissipation :
455W
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
JESD-609 Code :
e3
Surface Mount :
yes
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Mount :
Surface Mount
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Turn-Off Delay Time :
44 ns
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Published :
2007
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
0.75 mJ
Package Shape :
RECTANGULAR
Packaging :
Tube
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-263 (IXTA)
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 25V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-263AB
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXTA90N15T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N15T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA90N15T pinout, IXTA90N15T datasheet PDF, IXTA90N15T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N15T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA90N15T


N-Channel Tube 20m Ω @ 45A, 10V ±30V 4100pF @ 25V 80nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA90N15T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 0.75 mJ.A device's maximum input capacitance is 4100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 250A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA90N15T Features


the avalanche energy rating (Eas) is 0.75 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXTA90N15T Applications


There are a lot of IXYS
IXTA90N15T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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