IXTA90N075T2

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Mfr.Part #
IXTA90N075T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 90A TO263
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
75V
Published :
2009
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 175 C
Avalanche Energy Rating (Eas) :
400 mJ
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
90 A
Pin Count :
4
Pulsed Drain Current-Max (IDM) :
225A
JESD-609 Code :
e3
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-263 (IXTA)
Number of Terminations :
2
Width :
9.65 mm
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Factory Lead Time :
28 Weeks
Configuration :
Single
Surface Mount :
yes
Rise Time :
28ns
Number of Terminals :
2
Brand :
IXYS
Channel Mode :
Enhancement
Terminal Finish :
Matte Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
180W
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-263AB
Terminal Form :
Gull wing
ECCN Code :
EAR99
Power Dissipation (Max) :
180W (Tc)
Element Configuration :
Single
Base Product Number :
IXTA90
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
180 W
Terminal Position :
Single
Length :
10.41 mm
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
10m Ω @ 25A, 10V
Turn-Off Delay Time :
35 ns
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Series :
TrenchT2™
Fall Time (Typ) :
20 ns
Tradename :
HiPerFET
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
75V
Pbfree Code :
yes
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-30 Code :
R-PSSO-G2
Product Type :
MOSFET
Mounting Type :
Surface Mount
RoHS :
Details
Manufacturer :
IXYS
Continuous Drain Current (ID) :
90A
Height :
4.83 mm
Transistor Type :
1 N-Channel
Package :
Tube
FET Feature :
--
Mounting Style :
SMD/SMT
Drain-source On Resistance-Max :
0.01Ohm
Reach Compliance Code :
not_compliant
DS Breakdown Voltage-Min :
75 V
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Transistor Polarity :
N-Channel
Power Dissipation-Max :
180W Tc
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Datasheets
IXTA90N075T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N075T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTA90N075T2 pinout, IXTA90N075T2 datasheet PDF, IXTA90N075T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N075T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA90N075T2


N-Channel Tube 10m Ω @ 25A, 10V ±20V 3290pF @ 25V 54nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA90N075T2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3290pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 75 V in order to maintain normal operation.Operating this transistor requires a 75V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA90N075T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 225A.
a 75V drain to source voltage (Vdss)


IXTA90N075T2 Applications


There are a lot of IXYS
IXTA90N075T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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