IXTA90N075T2

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Mfr.Part #
IXTA90N075T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 90A TO263
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Power Dissipation :
180W
Width :
9.65 mm
Power Dissipation-Max (Abs) :
180 W
Number of Terminations :
2
Pin Count :
4
Number of Terminals :
2
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXTA)
Operating Temperature :
-55°C~175°C TJ
Product Category :
MOSFET
Continuous Drain Current (ID) :
90A
Base Product Number :
IXTA90
Number of Elements :
1
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
75V
Fall Time (Typ) :
20 ns
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Vgs (Max) :
±20V
Product Status :
Active
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Series :
TrenchT2™
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
75V
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
Maximum Operating Temperature :
+ 175 C
Case Connection :
DRAIN
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
75 V
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
90 A
Avalanche Energy Rating (Eas) :
400 mJ
JEDEC-95 Code :
TO-263AB
Manufacturer :
IXYS
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.01Ohm
Element Configuration :
Single
Power Dissipation-Max :
180W Tc
Rds On (Max) @ Id, Vgs :
10m Ω @ 25A, 10V
Length :
10.41 mm
FET Feature :
--
Turn-Off Delay Time :
35 ns
Tradename :
HiPerFET
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2009
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
180W (Tc)
Rise Time :
28ns
Pulsed Drain Current-Max (IDM) :
225A
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Factory Lead Time :
28 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Surface Mount :
yes
Package :
Tube
Packaging :
Tube
Height :
4.83 mm
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
Brand :
IXYS
Package Shape :
RECTANGULAR
Reach Compliance Code :
not_compliant
Additional Feature :
AVALANCHE RATED
Datasheets
IXTA90N075T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N075T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTA90N075T2 pinout, IXTA90N075T2 datasheet PDF, IXTA90N075T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N075T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA90N075T2


N-Channel Tube 10m Ω @ 25A, 10V ±20V 3290pF @ 25V 54nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA90N075T2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3290pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 75 V in order to maintain normal operation.Operating this transistor requires a 75V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA90N075T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 225A.
a 75V drain to source voltage (Vdss)


IXTA90N075T2 Applications


There are a lot of IXYS
IXTA90N075T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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