IXTA90N075T2
- Mfr.Part #
- IXTA90N075T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 90A TO263
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 75V
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 175 C
- Avalanche Energy Rating (Eas) :
- 400 mJ
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 90 A
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 225A
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-263 (IXTA)
- Number of Terminations :
- 2
- Width :
- 9.65 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Factory Lead Time :
- 28 Weeks
- Configuration :
- Single
- Surface Mount :
- yes
- Rise Time :
- 28ns
- Number of Terminals :
- 2
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 180W
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-263AB
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 180W (Tc)
- Element Configuration :
- Single
- Base Product Number :
- IXTA90
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 180 W
- Terminal Position :
- Single
- Length :
- 10.41 mm
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 25A, 10V
- Turn-Off Delay Time :
- 35 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- TrenchT2™
- Fall Time (Typ) :
- 20 ns
- Tradename :
- HiPerFET
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 75V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Product Type :
- MOSFET
- Mounting Type :
- Surface Mount
- RoHS :
- Details
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 90A
- Height :
- 4.83 mm
- Transistor Type :
- 1 N-Channel
- Package :
- Tube
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- Drain-source On Resistance-Max :
- 0.01Ohm
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 75 V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 180W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Datasheets
- IXTA90N075T2

N-Channel Tube 10m Ω @ 25A, 10V ±20V 3290pF @ 25V 54nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA90N075T2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3290pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 75 V in order to maintain normal operation.Operating this transistor requires a 75V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA90N075T2 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 225A.
a 75V drain to source voltage (Vdss)
IXTA90N075T2 Applications
There are a lot of IXYS
IXTA90N075T2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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