IXTA90N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

0.01Ohm

DS Breakdown Voltage-Min :

75 V

Power Dissipation-Max (Abs) :

180 W

Width :

9.65 mm

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-263AB

Package :

Tube

Turn-Off Delay Time :

35 ns

Drain Current-Max (Abs) (ID) :

90 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

Rise Time :

28ns

Mounting Style :

SMD/SMT

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

225A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Published :

2009

Mount :

Surface Mount

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Terminal Position :

Single

Base Product Number :

IXTA90

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

180W

Series :

TrenchT2™

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Length :

10.41 mm

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Brand :

IXYS

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Height :

4.83 mm

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Packaging :

Tube

Maximum Operating Temperature :

+ 175 C

Surface Mount :

yes

Transistor Polarity :

N-Channel

JESD-609 Code :

e3

ECCN Code :

EAR99

Fall Time (Typ) :

20 ns

Drain to Source Voltage (Vdss) :

75V

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Terminals :

2

Drain to Source Breakdown Voltage :

75V

Factory Lead Time :

28 Weeks

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Power Dissipation-Max :

180W Tc

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

400 mJ

FET Feature :

--

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

180W (Tc)

Element Configuration :

Single

RoHS :

Details

Continuous Drain Current (ID) :

90A

Product Status :

Active

Vgs (Max) :

±20V

Supplier Device Package :

TO-263 (IXTA)