IXTA90N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Fall Time (Typ) :

19 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 25V

Rise Time :

21ns

Case Connection :

DRAIN

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 25A, 10V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Status :

Active

Packaging :

Tube

Turn-Off Delay Time :

39 ns

Brand :

IXYS

Base Product Number :

IXTA90

Avalanche Energy Rating (Eas) :

300 mJ

Factory Lead Time :

28 Weeks

FET Type :

N-Channel

Number of Terminals :

2

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

90 A

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

230A

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Mount :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

150 W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

RoHS :

Details

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Series :

TrenchT2™

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Mounting Style :

SMD/SMT

Supplier Device Package :

TO-263 (IXTA)

Power Dissipation :

150W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Terminal Form :

Gull wing

Height :

4.83 mm

Vgs (Max) :

±20V

Width :

9.65 mm

Published :

2012

Maximum Operating Temperature :

+ 175 C

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-263AB

Power Dissipation (Max) :

150W (Tc)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

55V

Pin Count :

4

Tradename :

HiPerFET

Package :

Tube

Drain to Source Voltage (Vdss) :

55V

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Number of Terminations :

2

DS Breakdown Voltage-Min :

55 V

ECCN Code :

EAR99

Product Type :

MOSFET

Package Shape :

RECTANGULAR

Terminal Finish :

Matte Tin (Sn)

Length :

10.41 mm

Continuous Drain Current (ID) :

90A

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0084Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max :

150W Tc