IXTA90N055T2

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Mfr.Part #
IXTA90N055T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 90A TO263
Stock
30,236
In Stock :
30,236

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Number of Terminals :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
RoHS :
Details
Power Dissipation :
150W
Pin Count :
4
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Product Status :
Active
Turn-Off Delay Time :
39 ns
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
FET Feature :
--
Operating Temperature :
-55°C~175°C TJ
ECCN Code :
EAR99
Product Category :
MOSFET
Series :
TrenchT2™
Terminal Form :
Gull wing
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-263AB
Avalanche Energy Rating (Eas) :
300 mJ
Additional Feature :
AVALANCHE RATED
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0084Ohm
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
Tradename :
HiPerFET
Terminal Position :
Single
Base Product Number :
IXTA90
Gate to Source Voltage (Vgs) :
20V
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
90 A
Rise Time :
21ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2012
DS Breakdown Voltage-Min :
55 V
Power Dissipation (Max) :
150W (Tc)
JESD-609 Code :
e3
Brand :
IXYS
Maximum Operating Temperature :
+ 175 C
Case Connection :
DRAIN
Manufacturer :
IXYS
Length :
10.41 mm
Pulsed Drain Current-Max (IDM) :
230A
FET Type :
N-Channel
Number of Elements :
1
Drain to Source Breakdown Voltage :
55V
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
2770pF @ 25V
Transistor Type :
1 N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
150 W
Rds On (Max) @ Id, Vgs :
8.4m Ω @ 25A, 10V
Drain to Source Voltage (Vdss) :
55V
Factory Lead Time :
28 Weeks
Supplier Device Package :
TO-263 (IXTA)
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
150W Tc
Pbfree Code :
yes
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
90A
Transistor Application :
SWITCHING
Width :
9.65 mm
Mounting Style :
SMD/SMT
Fall Time (Typ) :
19 ns
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Configuration :
Single
Packaging :
Tube
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Height :
4.83 mm
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, IXTA90N055T2 pinout, IXTA90N055T2 datasheet PDF, IXTA90N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA90N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA90N055T2


N-Channel Tube 8.4m Ω @ 25A, 10V ±20V 2770pF @ 25V 42nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA90N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 2770pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 90 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 39 ns.Its maximum pulsed drain current is 230A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA90N055T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 230A.
a 55V drain to source voltage (Vdss)


IXTA90N055T2 Applications


There are a lot of IXYS
IXTA90N055T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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