IXTA8N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5.5V @ 100μA

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

500 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

8A

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

23 ns

Pbfree Code :

yes

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Power Dissipation (Max) :

150W (Tc)

Turn-Off Delay Time :

65 ns

Avalanche Energy Rating (Eas) :

400 mJ

FET Type :

N-Channel

Published :

2006

Lead Free :

Lead Free

Mount :

Surface Mount

FET Feature :

--

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Case Connection :

DRAIN

Element Configuration :

Single

Number of Terminations :

2

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

800m Ω @ 4A, 10V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-263AB

Additional Feature :

AVALANCHE RATED

Package :

Tube

Power Dissipation :

150W

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Product Status :

Obsolete

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.8Ohm

Pin Count :

4

Number of Terminals :

2

Surface Mount :

yes

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-263 (IXTA)

Drain to Source Breakdown Voltage :

500V

Continuous Drain Current (ID) :

8A

Pulsed Drain Current-Max (IDM) :

14 A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

Voltage - Rated DC :

500V

Radiation Hardening :

No

Base Product Number :

IXTA8

Manufacturer :

IXYS Corporation

Vgs (Max) :

±30V

Rise Time :

28ns

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

PolarHV™

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

Number of Elements :

1

Number of Pins :

3