IXTA8N50P
- Mfr.Part #
- IXTA8N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO263
- Stock
- 35,351
- In Stock :
- 35,351
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 500V
- Product Status :
- Obsolete
- Power Dissipation :
- 150W
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Factory Lead Time :
- 4 Weeks
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- TO-263 (IXTA)
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 14 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 150W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Power Dissipation (Max) :
- 150W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Fall Time (Typ) :
- 23 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Base Product Number :
- IXTA8
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 8A
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 500 V
- JEDEC-95 Code :
- TO-263AB
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 28ns
- Element Configuration :
- Single
- Voltage - Rated DC :
- 500V
- Series :
- PolarHV™
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Manufacturer :
- IXYS Corporation
- Drain Current-Max (Abs) (ID) :
- 8A
- Current Rating :
- 8A
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Drain-source On Resistance-Max :
- 0.8Ohm
- Number of Terminals :
- 2
- Turn-Off Delay Time :
- 65 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Package :
- Tube
- Datasheets
- IXTA8N50P
IXTA8N50P Documents

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA8N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1050pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 14 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA8N50P Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 500V drain to source voltage (Vdss)
IXTA8N50P Applications
There are a lot of IXYS
IXTA8N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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