IXTA86N20T

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Mfr.Part #
IXTA86N20T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 86A TO263
Stock
23,021
In Stock :
23,021

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Supplier Device Package :
TO-263 (IXTA)
Mounting Type :
Surface Mount
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.029Ohm
Drain to Source Resistance :
29 mΩ
Input Capacitance :
4.5 nF
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Transistor Type :
1 N-Channel
Configuration :
Single
Series :
--
Rds On Max :
29 mΩ
Rds On (Max) @ Id, Vgs :
29m Ω @ 500mA, 10V
Packaging :
Tube
Max Power Dissipation :
480 W
Factory Lead Time :
30 Weeks
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Power Dissipation :
480W
Gate to Source Voltage (Vgs) :
30V
Subcategory :
MOSFETs
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Number of Elements :
1
Number of Terminations :
2
RoHS :
Compliant
Continuous Drain Current (ID) :
86A
Min Operating Temperature :
-55 °C
Published :
2006
Drain to Source Voltage (Vdss) :
200V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Power Dissipation (Max) :
480W (Tc)
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 175 C
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
Mounting Style :
SMD/SMT
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Mount :
Surface Mount
Package :
Tube
Pulsed Drain Current-Max (IDM) :
260A
JESD-609 Code :
e3
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
200V
FET Feature :
--
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Pin Count :
4
Vgs (Max) :
±30V
Base Product Number :
IXTA86
Avalanche Energy Rating (Eas) :
1000 mJ
Max Operating Temperature :
175 °C
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5V @ 1mA
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Transistor Polarity :
N-Channel
Power Dissipation-Max :
480W Tc
Product Type :
MOSFET
Datasheets
IXTA86N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA86N20T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXTA86N20T pinout, IXTA86N20T datasheet PDF, IXTA86N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA86N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA86N20T


N-Channel Tube 29m Ω @ 500mA, 10V ±30V 4500pF @ 25V 90nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA86N20T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 86A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 29 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA86N20T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 260A.
single MOSFETs transistor is 29 mΩ
a 200V drain to source voltage (Vdss)


IXTA86N20T Applications


There are a lot of IXYS
IXTA86N20T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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