IXTA86N20T
- Mfr.Part #
- IXTA86N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 86A TO263
- Stock
- 23,021
- In Stock :
- 23,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- TO-263 (IXTA)
- Mounting Type :
- Surface Mount
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.029Ohm
- Drain to Source Resistance :
- 29 mΩ
- Input Capacitance :
- 4.5 nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Series :
- --
- Rds On Max :
- 29 mΩ
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 500mA, 10V
- Packaging :
- Tube
- Max Power Dissipation :
- 480 W
- Factory Lead Time :
- 30 Weeks
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 480W
- Gate to Source Voltage (Vgs) :
- 30V
- Subcategory :
- MOSFETs
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Number of Elements :
- 1
- Number of Terminations :
- 2
- RoHS :
- Compliant
- Continuous Drain Current (ID) :
- 86A
- Min Operating Temperature :
- -55 °C
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Power Dissipation (Max) :
- 480W (Tc)
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 175 C
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Mounting Style :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Mount :
- Surface Mount
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 260A
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 200V
- FET Feature :
- --
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 4
- Vgs (Max) :
- ±30V
- Base Product Number :
- IXTA86
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Max Operating Temperature :
- 175 °C
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 480W Tc
- Product Type :
- MOSFET
- Datasheets
- IXTA86N20T

N-Channel Tube 29m Ω @ 500mA, 10V ±30V 4500pF @ 25V 90nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA86N20T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 86A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 29 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA86N20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 260A.
single MOSFETs transistor is 29 mΩ
a 200V drain to source voltage (Vdss)
IXTA86N20T Applications
There are a lot of IXYS
IXTA86N20T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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