IXTA86N20T

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Mfr.Part #
IXTA86N20T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 86A TO263
Stock
23,021
In Stock :
23,021

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Tradename :
HiPerFET
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Terminal Finish :
Matte Tin (Sn)
Mount :
Surface Mount
Mounting Style :
SMD/SMT
Supplier Device Package :
TO-263 (IXTA)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Published :
2006
Pulsed Drain Current-Max (IDM) :
260A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Subcategory :
MOSFETs
Terminal Form :
Gull wing
FET Feature :
--
Pin Count :
4
Rds On (Max) @ Id, Vgs :
29m Ω @ 500mA, 10V
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
480W Tc
Power Dissipation :
480W
Drain-source On Resistance-Max :
0.029Ohm
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Product Category :
MOSFET
Series :
--
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Max Operating Temperature :
175 °C
Drain to Source Resistance :
29 mΩ
Number of Terminations :
2
Product Status :
Active
ECCN Code :
EAR99
Brand :
IXYS
Rds On Max :
29 mΩ
Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
200V
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Qualification Status :
Not Qualified
RoHS :
Compliant
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Input Capacitance :
4.5 nF
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Vgs (Max) :
±30V
Min Operating Temperature :
-55 °C
Base Product Number :
IXTA86
Continuous Drain Current (ID) :
86A
Package :
Tube
Manufacturer :
IXYS
Mounting Type :
Surface Mount
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
480W (Tc)
Reach Compliance Code :
not_compliant
Case Connection :
DRAIN
Max Power Dissipation :
480 W
Factory Lead Time :
30 Weeks
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Maximum Operating Temperature :
+ 175 C
Drain to Source Voltage (Vdss) :
200V
Datasheets
IXTA86N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA86N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA86N20T pinout, IXTA86N20T datasheet PDF, IXTA86N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA86N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA86N20T


N-Channel Tube 29m Ω @ 500mA, 10V ±30V 4500pF @ 25V 90nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA86N20T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 86A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 29 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA86N20T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 260A.
single MOSFETs transistor is 29 mΩ
a 200V drain to source voltage (Vdss)


IXTA86N20T Applications


There are a lot of IXYS
IXTA86N20T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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