IXTA80N12T2

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Mfr.Part #
IXTA80N12T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 120V 80A TO263
Stock
42,349
In Stock :
42,349

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Tradename :
HiPerFET
Packaging :
Tube
Brand :
IXYS
Pin Count :
3
Transistor Application :
SWITCHING
RoHS :
Details
Number of Terminations :
2
Power Dissipation-Max (Abs) :
325 W
Number of Channels :
1 Channel
FET Feature :
--
Transistor Type :
1 N-Channel
Mounting Style :
SMD/SMT
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Continuous Drain Current (ID) :
80A
Drain Current-Max (Abs) (ID) :
80 A
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
400 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
28 Weeks
ECCN Code :
EAR99
Base Product Number :
IXTA80
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Pbfree Code :
yes
Surface Mount :
yes
Reach Compliance Code :
not_compliant
Mount :
Surface Mount
Package :
Tube
Manufacturer :
IXYS
Power Dissipation (Max) :
325W (Tc)
Terminal Form :
Gull wing
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
4740pF @ 25V
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
120V
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
200A
Drain to Source Voltage (Vdss) :
120V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
2
Series :
TrenchT2™
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.017Ohm
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Power Dissipation-Max :
325W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2012
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Rds On (Max) @ Id, Vgs :
17m Ω @ 40A, 10V
Supplier Device Package :
TO-263 (IXTA)
Package Shape :
RECTANGULAR
Datasheets
IXTA80N12T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA80N12T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA80N12T2 pinout, IXTA80N12T2 datasheet PDF, IXTA80N12T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA80N12T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA80N12T2


N-Channel Tube 17m Ω @ 40A, 10V ±20V 4740pF @ 25V 80nC @ 10V 120V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA80N12T2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4740pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 80 A.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 120V.This transistor requires a drain-source voltage (Vdss) of 120V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA80N12T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 200A.
a 120V drain to source voltage (Vdss)


IXTA80N12T2 Applications


There are a lot of IXYS
IXTA80N12T2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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