IXTA80N12T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

2

Terminal Form :

Gull wing

Product Type :

MOSFET

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4740pF @ 25V

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

80 A

Transistor Type :

1 N-Channel

RoHS :

Details

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

120V

Transistor Element Material :

SILICON

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

80A

FET Feature :

--

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

Manufacturer :

IXYS

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

200A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

17m Ω @ 40A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Power Dissipation (Max) :

325W (Tc)

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

325W Tc

Package :

Tube

Published :

2012

Power Dissipation-Max (Abs) :

325 W

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Base Product Number :

IXTA80

Product Category :

MOSFET

Packaging :

Tube

Factory Lead Time :

28 Weeks

Avalanche Energy Rating (Eas) :

400 mJ

Mounting Style :

SMD/SMT

Series :

TrenchT2™

Drain to Source Voltage (Vdss) :

120V

Drain-source On Resistance-Max :

0.017Ohm

JESD-609 Code :

e3

ECCN Code :

EAR99

Supplier Device Package :

TO-263 (IXTA)

Tradename :

HiPerFET