IXTA80N10T7

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Mfr.Part #
IXTA80N10T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 100V 80A TO263-7
Stock
33,199
In Stock :
33,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
100 V
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
3040pF @ 25V
Pin Count :
4
Packaging :
Tube
Drain to Source Breakdown Voltage :
100V
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
6
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Rds On (Max) @ Id, Vgs :
14m Ω @ 25A, 10V
JESD-30 Code :
R-PSSO-G6
Drain-source On Resistance-Max :
0.014Ohm
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Published :
2006
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXTA80
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Transistor Element Material :
SILICON
Fall Time (Typ) :
48 ns
Mounting Type :
Surface Mount
Power Dissipation-Max :
230W Tc
Avalanche Energy Rating (Eas) :
400 mJ
JEDEC-95 Code :
TO-263
FET Type :
N-Channel
Power Dissipation (Max) :
230W (Tc)
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Series :
TrenchMV™
Rise Time :
54ns
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
TO-263-7 (IXTA..7)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
yes
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4.5V @ 100μA
Power Dissipation :
230W
Terminal Finish :
Matte Tin (Sn)
Pulsed Drain Current-Max (IDM) :
220A
Mount :
Surface Mount
Manufacturer :
IXYS Corporation
Case Connection :
DRAIN
JESD-609 Code :
e3
ECCN Code :
EAR99
Package :
Tube
RoHS Status :
RoHS Compliant
Turn-Off Delay Time :
40 ns
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
80A
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Terminal Position :
Single
Number of Terminals :
6
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
Drain to Source Voltage (Vdss) :
100V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTA80N10T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA80N10T7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Operating Temperature:-55°C~175°C TJ, IXTA80N10T7 pinout, IXTA80N10T7 datasheet PDF, IXTA80N10T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA80N10T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA80N10T7


N-Channel Tube 14m Ω @ 25A, 10V ±30V 3040pF @ 25V 60nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA80N10T7 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3040pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 220A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100 V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA80N10T7 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 220A.
a 100V drain to source voltage (Vdss)


IXTA80N10T7 Applications


There are a lot of IXYS
IXTA80N10T7 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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