IXTA80N10T7
- Mfr.Part #
- IXTA80N10T7
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A TO263-7
- Stock
- 33,199
- In Stock :
- 33,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 100 V
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 3040pF @ 25V
- Pin Count :
- 4
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 25A, 10V
- JESD-30 Code :
- R-PSSO-G6
- Drain-source On Resistance-Max :
- 0.014Ohm
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTA80
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 48 ns
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 230W Tc
- Avalanche Energy Rating (Eas) :
- 400 mJ
- JEDEC-95 Code :
- TO-263
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 230W (Tc)
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Series :
- TrenchMV™
- Rise Time :
- 54ns
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- TO-263-7 (IXTA..7)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Power Dissipation :
- 230W
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 220A
- Mount :
- Surface Mount
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Package :
- Tube
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 40 ns
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 80A
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Number of Terminals :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 100V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXTA80N10T7

N-Channel Tube 14m Ω @ 25A, 10V ±30V 3040pF @ 25V 60nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA80N10T7 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3040pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 220A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100 V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA80N10T7 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 220A.
a 100V drain to source voltage (Vdss)
IXTA80N10T7 Applications
There are a lot of IXYS
IXTA80N10T7 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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