IXTA80N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

175 °C

Terminal Position :

Single

Number of Channels :

1 Channel

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

80 A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

220A

Power Dissipation (Max) :

230W (Tc)

Product Type :

MOSFET

Channel Mode :

Enhancement

Power Dissipation-Max :

230W Tc

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

3040pF @ 25V

Height :

4.83 mm

Pbfree Code :

yes

RoHS :

Details

Drain to Source Resistance :

14 mΩ

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Manufacturer :

IXYS

Turn-Off Delay Time :

40 ns

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

400 mJ

Minimum Operating Temperature :

- 55 C

Width :

10.41 mm

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Base Product Number :

IXTA80

Number of Terminals :

2

Lead Free :

Lead Free

Maximum Operating Temperature :

+ 175 C

Factory Lead Time :

28 Weeks

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100 V

Drain-source On Resistance-Max :

0.014 Ω

Power Dissipation-Max (Abs) :

230 W

Reach Compliance Code :

not_compliant

Max Power Dissipation :

230 W

Case Connection :

DRAIN

Tradename :

HiPerFET

Terminal Form :

Gull wing

Supplier Device Package :

TO-263 (IXTA)

Series :

TrenchMV™

Drain to Source Voltage (Vdss) :

100V

Published :

2009

Surface Mount :

yes

Type :

TrenchMV Power MOSFET

Pin Count :

4

Product Status :

Active

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 100µA

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Rds On Max :

14 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

FET Feature :

--

Fall Time (Typ) :

48 ns

Length :

9.65 mm

Input Capacitance :

3.04 nF

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

54ns

Radiation Hardening :

No

Packaging :

Tube

JEDEC-95 Code :

TO-263AB

Power Dissipation :

230W

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V