IXTA76P10T

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Mfr.Part #
IXTA76P10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 100V 76A TO263
Stock
500
In Stock :
500

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Terminal Form :
Gull wing
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
230 A
Length :
9.65 mm
FET Type :
P-Channel
DS Breakdown Voltage-Min :
100 V
Continuous Drain Current Id :
76A
Series :
TrenchP™
Power Dissipation-Max :
298W Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263 (IXTA)
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
RoHS :
Details
Product Status :
Active
Case Connection :
DRAIN
Terminal Finish :
PURE TIN
Power Dissipation-Max (Abs) :
298 W
Continuous Drain Current (ID) :
76A
Power Dissipation (Max) :
298W (Tc)
Radiation Hardening :
No
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Pbfree Code :
yes
Reach Compliance Code :
Unknown
Packaging :
Tube
JEDEC-95 Code :
TO-263AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2010
Pin Count :
4
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Element Material :
SILICON
Tradename :
TrenchP
Type :
TrenchP Power MOSFET
Package Shape :
RECTANGULAR
Polarity/Channel Type :
P-Channel
Drain-source On Resistance-Max :
0.024Ohm
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Mounting Style :
SMD/SMT
Gate to Source Voltage (Vgs) :
15V
Height :
4.83 mm
Rise Time :
40 ns
Channel Type :
P Channel
Qualification :
-
Width :
10.41 mm
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
Power Dissipation :
298W
Number of Terminations :
2
Manufacturer :
IXYS
Surface Mount :
yes
Number of Pins :
3
Transistor Type :
1 P-Channel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
76A Tc
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Channel Mode :
Enhancement
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
17 Weeks
Product Type :
MOSFET
Vgs (Max) :
±15V
Drain Current-Max (Abs) (ID) :
76 A
Mounting Type :
Surface Mount
Terminal Position :
Single
FET Feature :
--
Rds On (Max) @ Id, Vgs :
25m Ω @ 500mA, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Product Category :
MOSFET
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
13700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Number of Elements :
1
Base Product Number :
IXTA76
Transistor Polarity :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXTA76P10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA76P10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:TrenchP Power MOSFET, Number of Terminations:2, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IXTA76P10T pinout, IXTA76P10T datasheet PDF, IXTA76P10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA76P10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA76P10T


P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA76P10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 76 A.There is a peak drain current of 230 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA76P10T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
based on its rated peak drain current 230 A.
a 100V drain to source voltage (Vdss)


IXTA76P10T Applications


There are a lot of IXYS
IXTA76P10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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