IXTA76P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

230 A

Published :

2010

Base Product Number :

IXTA76

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Terminal Finish :

PURE TIN

Transistor Application :

SWITCHING

Length :

9.65 mm

Mounting Type :

Surface Mount

Polarity/Channel Type :

P-Channel

Drain Current-Max (Abs) (ID) :

76 A

Drain-source On Resistance-Max :

0.024Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

298 W

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

100 V

Brand :

IXYS

Width :

10.41 mm

Terminal Position :

Single

Surface Mount :

yes

Continuous Drain Current (ID) :

76A

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

100V

Number of Channels :

1 Channel

Rise Time :

40 ns

Number of Pins :

3

Qualification :

-

Gate to Source Voltage (Vgs) :

15V

Avalanche Energy Rating (Eas) :

1000 mJ

Pbfree Code :

yes

Continuous Drain Current Id :

76A

Terminal Form :

Gull wing

Number of Elements :

1

Channel Type :

P Channel

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

FET Type :

P-Channel

Factory Lead Time :

17 Weeks

JEDEC-95 Code :

TO-263AA

Lead Free :

Lead Free

Height :

4.83 mm

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Mounting Style :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mount :

Surface Mount

Series :

TrenchP™

Vgs (Max) :

±15V

Channel Mode :

Enhancement

Tradename :

TrenchP

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

FET Feature :

--

Power Dissipation-Max :

298W Tc

Number of Terminals :

2

Transistor Type :

1 P-Channel

Power Dissipation (Max) :

298W (Tc)

Transistor Element Material :

SILICON

Package :

Tube

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Polarity :

P-Channel

Package Shape :

RECTANGULAR

Power Dissipation :

298W

Type :

TrenchP Power MOSFET

Radiation Hardening :

No

RoHS :

Details

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package :

TO-263 (IXTA)

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Packaging :

Tube

Minimum Operating Temperature :

- 55 C