IXTA76N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

1500 mJ

Rise Time :

25ns

Product Status :

Active

Length :

9.65 mm

Number of Terminals :

2

Pulsed Drain Current-Max (IDM) :

170A

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

76A

Surface Mount :

yes

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2007

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

250V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

460W Tc

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Fall Time (Typ) :

29 ns

Product Type :

MOSFET

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Reach Compliance Code :

not_compliant

Brand :

IXYS

Power Dissipation-Max (Abs) :

460 W

Supplier Device Package :

TO-263 (IXTA)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

460W

Drain Current-Max (Abs) (ID) :

76 A

Turn-Off Delay Time :

56 ns

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

250V

Vgs(th) (Max) @ Id :

5V @ 1mA

Rds On (Max) @ Id, Vgs :

39m Ω @ 500mA, 10V

Mounting Style :

SMD/SMT

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Base Product Number :

IXTA76

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.039Ohm

Pbfree Code :

yes

JESD-609 Code :

e3

Height :

4.83 mm

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Width :

10.41 mm

Number of Elements :

1

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-263AB

Case Connection :

DRAIN

Terminal Position :

Single

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

460W (Tc)

Configuration :

Single

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Series :

-

Type :

Trench Power MOSFET

FET Type :

N-Channel

DS Breakdown Voltage-Min :

250 V

Pin Count :

4

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V