IXTA76N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

2

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Transistor Type :

1 N-Channel

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

460 W

Tradename :

HiPerFET

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

JESD-609 Code :

e3

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.039Ohm

Maximum Operating Temperature :

+ 150 C

Width :

10.41 mm

Mounting Style :

SMD/SMT

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

29 ns

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain Current-Max (Abs) (ID) :

76 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

FET Feature :

-

Transistor Polarity :

N-Channel

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

39m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Type :

Trench Power MOSFET

Base Product Number :

IXTA76

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Power Dissipation (Max) :

460W (Tc)

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

170A

Packaging :

Tube

Element Configuration :

Single

Power Dissipation-Max :

460W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

250V

Series :

-

Continuous Drain Current (ID) :

76A

Number of Terminations :

2

JEDEC-95 Code :

TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-263 (IXTA)

Drain to Source Breakdown Voltage :

250V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

76A Tc

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Published :

2007

ECCN Code :

EAR99

Product Category :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

250 V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

56 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

1500 mJ

Case Connection :

DRAIN

Pin Count :

4

Rise Time :

25ns

Reach Compliance Code :

not_compliant

Factory Lead Time :

30 Weeks

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Length :

9.65 mm

Manufacturer :

IXYS

Power Dissipation :

460W

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Height :

4.83 mm

Surface Mount :

yes