IXTA76N075T

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Mfr.Part #
IXTA76N075T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 76A TO263
Stock
2,015
In Stock :
2,015

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
210A
Published :
2006
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
2
Avalanche Energy Rating (Eas) :
500 mJ
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
33 ns
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Packaging :
Tube
Power Dissipation (Max) :
176W (Tc)
Package :
Tube
Number of Elements :
1
Rise Time :
40ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
4
JEDEC-95 Code :
TO-263AB
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Power Dissipation :
176W
Drain-source On Resistance-Max :
0.012Ohm
JESD-609 Code :
e3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Feature :
--
Element Configuration :
Single
Number of Terminations :
2
DS Breakdown Voltage-Min :
75 V
Terminal Form :
Gull wing
Reach Compliance Code :
Compliant
Base Product Number :
IXTA76
Drain to Source Voltage (Vdss) :
75V
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4V @ 50μA
Rds On (Max) @ Id, Vgs :
12m Ω @ 25A, 10V
Mount :
Surface Mount
Power Dissipation-Max :
176W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
75V
Turn-Off Delay Time :
38 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Series :
TrenchMV™
Transistor Element Material :
SILICON
Supplier Device Package :
TO-263 (IXTA)
Input Capacitance (Ciss) (Max) @ Vds :
2580pF @ 25V
Pbfree Code :
yes
Continuous Drain Current (ID) :
76A
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Surface Mount :
yes
Datasheets
IXTA76N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA76N075T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, IXTA76N075T pinout, IXTA76N075T datasheet PDF, IXTA76N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA76N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA76N075T


N-Channel Tube 12m Ω @ 25A, 10V ±20V 2580pF @ 25V 57nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA76N075T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 2580pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 76A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 210A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 75 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 75V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA76N075T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 210A.
a 75V drain to source voltage (Vdss)


IXTA76N075T Applications


There are a lot of IXYS
IXTA76N075T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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